◎ SEMIHOW REV.A0,March 2012
MCK100- 8
FEATURES
Repetitive Peak Off-State Voltage: 600V
R.M.S On–State C urrent (I
T(RMS)
= 1A)
Low Gate Trigger Current : 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit.
General Descr iption
Semihow’s SCR product is a single directional PNPN device, has a
low gate trigger current and high stability in gate trigger current to
temperature, generally suitable for sensing and detection circuits.
MCK100-8
Silicon Controlled Rectifier
V
DRM
= 600 V
I
T(RMS)
= 1 A
I
TSM
= 11 A
I
GT
= 200uA
Symbol
Absolute Maximum Ratings (T
J
=25℃ unless otherwise specified )
Symbol
Parameter Conditions Ratings Unit
V
DRM
Repetitive Peak Off-State Voltage
Sine wave, 50/60Hz, Gat e open
600 V
V
RRM
Repetitive Peak Reverse Voltage 600 V
I
T(AV)
Average On-State C urrent
Full sine w ave, T
C
= 80.4
o
C
0.64 A
I
T(RMS)
R.M.S. On-Stat e Current 1 A
I
TSM
Surge On-State Current
½ cycle,
50Hz/60Hz , Sine w av e,
Non repetitive
10/11 A
I
2
t Fusing Current t = 10ms 0.5 A
2
S
P
GM
Forward Peak Gate Power
Dissipation
T
J
= 125 °C, pulse width ≤ 1.0us
2 W
P
G(AV)
Forward Average Gat e Power
Dissipation
T
J
= 125 °C, t = 8.3ms
0.1 W
I
FGM
Forward Peak Gate Current
T
J
= 125 °C, pulse width ≤ 1.0us
1 A
V
RGM
Reverse Peak Gat e Voltage
T
J
= 125 °C, pulse width ≤ 1.0us
5 V
T
J
Operating Junction T emperature -40~+125
o
C
T
STG
Storage Temperature -40~+150
o
C
SOT-89
K
A
G
◎ SEMIHOW REV.A0,March 2012
MCK100- 8
Thermal Character istic s
Electrical C haracteristic s
(T
C
=25℃ unless otherwise specified )
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Symbol Parameter Conditions Min Typ Max Unit
I
DRM
Repetitive Peak Off-State Current V
D
= V
DRM
T
C
=25
o
C - - 50 uA
T
C
=125
o
C - - 5 mA
I
RRM
Repetitive Peak Reverse Current V
D
= V
DRM
T
C
=25
o
C - - 50 uA
T
C
=125
o
C - - 5 mA
I
GT
Gate Trigger Cur rent V
D
= 12V, R
L
=330Ω - - 200 uA
V
GT
Gate Trigger Voltage V
D
= 12V, R
L
=330Ω - - 1.0 V
V
GD
Non-Trigger Gate Voltage
1
V
D
= 12V, R
L
=330Ω, T
J
=125
o
C 0.2 - - V
V
TM
Peak On-State Voltage I
T
= 1.4A, I
G
= 5mA - 1.2 1.6 V
dv/dt
Critical Rate of Rise of Off-State
Voltage
V
D
= 2/3 V
DRM
, T
J
=125
o
C 10 - - V/us
I
H
Holding current I
T
= 0.2A - - 2 mA
Symbol Parameter Conditions Min Typ Max Unit
R
θJC
Thermal Resistance Junction to Case 56
o
C/W
R
θJA
Thermal Resistance Junction to Ambient 150
o
C/W