07/06/10
www.irf.com 1
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 7.5mΩ
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
IRF1010ZPbF
IRF1010ZSPbF
IRF1010ZLPbF
D
2
Pak
IRF1010ZSPbF
TO-220AB
IRF1010ZPbF
TO-262
IRF1010ZLPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
u
l
se
d D
ra
i
n
C
urrent
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urrent
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.11 °C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
180
130
See Fig.12a, 12b, 15, 16
140
0.90
± 20
Max.
94
66
360
75
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
PD - 95361A
IRF1010Z/S/LPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.8 7.5
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 33 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 63 95
Q
gs
Gate-to-Source Charge ––– 19 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 24 –––
t
d(on)
Turn-On Delay Time ––– 18 –––
t
r
Rise Time ––– 150 –––
t
d(off)
Turn-Off Delay Time ––– 36 ––– ns
t
f
Fall Time ––– 92 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 2840 –––
C
oss
Output Capacitance ––– 420 –––
C
rss
Reverse Transfer Capacitance ––– 250 ––– pF
C
oss
Output Capacitance ––– 1630 –––
C
oss
Output Capacitance ––– 360 –––
C
oss
eff.
Effective Output Capacitance ––– 560 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 75
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 360
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 22 33 ns
Q
rr
Reverse Recovery Charge ––– 15 23 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
R
G
= 6.8
Ω
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 25V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 75A
I
D
= 75A
V
DS
= 44V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V