PAGE . 1
2018-1-1-REV.01
GBJ10005~GBJ1010
FEATURES
Glass passivated chip junction
Low Forward Voltage Drop
High Curr ent Capability
High reliability
Lead free in compliance with EU RoHS
MECHANICAL DA T A
BRIDGE RECTIFIERS
50 to 1000 Volt
CURRENT
10 Ampere
MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER SYMBOL
GBJ10005
GBJ1001 GBJ1002 GBJ1004
GBJ1006
UNITS
Maximum Recurrent Peak Reverse Voltage V
RRM
50 100 200 400 600 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 V
Maximum DC Blocking Voltage V
DC
50 100 200 400
600
V
Maximum Average Forw ard Current (see FIG.1)
10 A
Peak Forw ar d Surge Current : 8. 3ms single half
sine-w ave superimposed o n r ated load
I
FSM
170 A
Maximum For w ard Volt age at 5 A
V
F
1.05
V
Maximum DC Reverse Current a t
Rat ed DC Blocking Voltage
T
J
= 2 5
O
C
T
J
= 1 25
O
C
I
R
500
μA
T h e r ma l Re s i s t a n c e (Note1)
O
C / W
Operating Junction Temperature Range T
J
O
C
Storage Temperature Range
T
STG
-55 t o + 150
O
C
GBJ
Unit:mm
R
θJC
1.4
Case Material: M
o
lded Plastic.
UL Flammability
Classification Rating 94V-0
800
560
800
www.grande.com.cn
10
GBJ1008
GBJ1010
1000
700
1000
I
F(AV)
-55 t o + 150
3.8~4.2
I
2
t Rating for fusing
A
2
S
120
I
2
t
C
J
pF
Typical Junction Capacitance
(Note2)
55
NOTES:
1.Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
2.Measured at 1.0MHz and applied reverse voltage of 4.0 volt
_
3.0 X 45°
19.7~20.3
17.0~18.0
7.30~7.07
9.8~10.2
2.0~2.4
0.9~1.1
2.3~2.7
4.4~4.8
3.4~3.8
3.1~3.4
27.90~30.30
2.5~2.9
0.6~0.8
10.8~11.2
VOLTAGE
PAGE . 2
2018-1-1-REV.01
RATING AND CHARACTERISTIC CURVES
GBJ10005~GBJ1010
www.grande.com.cn
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typical Forward Characteristics (per element)
F
I , INSTANTANEOUS FORWARD CURRENT (A)
F
T = 25°C
J
Pulse width = 300µs
0
40
80
120
160
180
1
10
100
I ), PEAK FWD SURGE CURRENT (A
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T = 150°C
J
Single half-sine-wave
(JEDEC method)
10
100
1
1 100
C , JUNCTION CAPACITANCE (pF)
j
10
V , REVERSE VOLTAGE (V)
Fig.4 Typical Junction Capacitance
R
f = 1MHz
T = 25 C
j
°
0.1
1.0
10
100
1000
02040 6080
100
120
140
I
R
, INSTANTANEOUS
REVERSE
CURRENT (
µA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
T = 150°C
J
T = 125°C
J
T = 100°C
J
T = 25°C
J
0
2
4
6
8
10
12
25 50 75 100 125 150
I , AVERAGE RECTIFIED CURRENT (A)
O
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
Resistive or
Inductive load
with heatsink
without heatsink