Gem mic ro
semiconductor Inc.
GS8958
DS-GS8958-REV07-LJ17
Page 1 of 9
Complementary High Density Trench MOSFET
PRODUCT SUMMARY (N-Channel)
PRODUCT SUMMARY (P-Channel)
V
DSS
I
D
R
DS(on)
(mΩ) Max V
DSS
I
D
R
DS(on)
(mΩ) Max
30V 6.5A
28 @ V
GS
= 10 V,I
D
=6.5A
-30V -5A
60 @ V
GS
= -10V,I
D
=-5A
42 @ V
GS
= 4.5 V,I
D
=5.0A 90 @ V
GS
= -4.5V,I
D
=-4A
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Ordering information：GS8958(Lead(Pb)-free and halogen-free)
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol Parameter N-Channel P-Channel Units
V
DS
Drain-Source Voltage 30 -30 V
V
GS
Gate-Source Voltage
±20 ±20
V
I
D
Drain Current
a
6.5 -5 A
I
DM
Drain Current
b
(Pulsed)
a
28 -20 A
P
D
To tal Po wer Dissipation
a
@T
A
=25
o
C 2.0 2.0 W
T
j
, T
stg
Operating Junction and Storage Temperature Range
a
-55 to +150 -55 to +150
°C
R
θJA
Thermal Resis tance Junction to Ambien t
a
63.2 63.2
°C/W
Note: a: Surface Mounted on FR4 Board , t ≤ 5sec .
b: P ulse width limi ted by maximu m junction t emperature.
Pin 1: Sourc e 2
Pin 2: Gate 2
Pin 3: Sourc e 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8
: Drain 2
1
2
3
4
8
7
6
5
Gem mic ro
semiconductor Inc.
GS8958
DS-GS8958-REV07-LJ17
Page 2 of 9
N-Channel Electrical Characteristics(T
A
=25°C, unless otherwis e noted )
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
• Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA 30 - - V
I
DSS
Zero Gate Voltage Drain Cu r r ent V
DS
=24V, V
GS
=0V - - -1 uA
I
GSS
Gate-Body Leakage Current
V
GS
=±20V, V
DS
=0V
- -
±100
nA
• On Characteristics
c
V
GS(th)
G ate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 1.0 1.4 3.0 V
R
DS(on)
Drain-Source On-State Resistance
V
GS
=10V, I
D
= 6.5A - 22 28
mΩ
V
GS
=4.5V, I
D
= 5.0A
- 34 42
gfs Forward Transconductance V
DS
=5V, I
D
= 5.0A - 6.0 - S
• Dynamic Chara ct eristics
d
C
iss
Input C apacitance
V
DS
=15V, V
GS
=0V, f=1 MHz
- 398 -
pF
C
oss
Outp ut Capacitance - 67 -
C
rss
Reverse T ransfer Capacitance - 61 -
•
Switching Characteristics
d
Q
g
Tot al Gate Charge
V
DS
=10V, I
D
=1A, V
GS
=10V
- 7.4 -
nC
Q
gs
Gate-Source Charge - 1.7 -
Q
gd
Gate-Dr ain Charge - 1.3 -
t
d(on)
Turn-on Delay Time
V
DD
= 15V, R
L
=15Ω, I
D
=1A,
V
GEN
=10V, R
G
=6Ω
- 8.0 -
nS
t
r
Turn-on Rise Time - 11.2 -
t
d(off)
Turn-off Delay Time - 17.2 -
t
f
Turn-off Fall Time - 7.54 -
• Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward Voltage V
GS
=0V, I
S
=2.5A - - 1.3 V
Note:
b: Pu lse width limit ed by maximum j unc ti on temperatur e.
c: Guaranteed b y design , not subjec t to productio n testing .