TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
TIP31/TIP31A/TIP31B/TIP31C Rev. A 1
TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP32/TIP32A/TIP32B/TIP32C
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Bas e Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC ) 3 A
I
CP
Collector Current (Pu lse ) 5 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
Collector Dissipation (T
a
=25°C) 2 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
1. Base 2. Collector 3. Emitter
TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
TIP31/TIP31A/TIP31B/TIP31C Rev. A 2
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condi tion Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
I
C
= 30mA, I
B
= 0 40
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA
I
CES
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
200
200
200
200
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 375mA 1.2 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= 4V, I
C
= 3A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA, f = 1MHz 3.0 MHz