Features Product Summary
Typ. Unit
100 V
1.7 V
99 A
5.4
m
6.6
m
Applications
Package # of Pins Marking MSL
T
J
(°C)
Media Quantity (pcs)
TO251-3L 3 SL1006A N/A -55 to 175 Tube 80
TO252-3L 3 SL1006A 3 -55 to 175 13-inch Reel 2500
Symbol Unit
V
DS
V
V
GS
V
I
DM
A
I
AS
A
E
AS
mJ
T
J
, T
STG
°C
JMSL1006AH-U
Value
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
JMSL1006AK-13
JMSL1006AH
JMSL1006AK
100V 5.4m N-Ch Power MOSFET
Parameter
V
DS
V
GS(th)
I
D
(@ V
GS
= 10V)
(1)
R
DS(ON)
(@ V
GS
= 10V)
Ordering Information
Device
R
DS(ON)
(@ V
GS
= 4.5V)
A
Drain-to-Source Voltage 100
Gate-to-Source Voltage ±20
Junction & Storage Temperature Range -55 to 175
Power Dissipation
(4)
T
C
= 25°C
P
D
121
W
T
C
= 100°C
60
Avalanche Current
(3)
50
Avalanche Energy
(3)
125
Pulsed Drain Current
(2)
265
Continuous Drain
Current
(1)
T
C
= 25°C
I
D
99
T
C
= 100°C
70
• Ultra-low R
DS(ON)
• Low Gate Charge
• High Current Capability
• 100% UIS Tested, 100% R
g
Tested
0
6
12
18
24
30
03691215
R
DS(ON)
(m)
V
GS
(V)
0
2
4
6
8
10
0 1020304050
V
GS
(V)
Q
g
(nC)
R
D
S(O
N
)
vs. V
GS
Gate Charge
V
DS
= 50V
I
D
= 20A
• Power Managerment in Telecom., Industrial Automation, CE
• Current Switching in DC/DC & AC/DC (SR) Sub-systems
• Motor Driving in Power Tool, E-vehicle, Robotics
I
D
= 20A
G
D
S
TO252-3L Top View
G
D
S
TO251 Top View
G
D
S
Rev. 1.2
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 1 of 6
Symbol Min. Typ. Max. Unit
V
(BR)DSS
100 V
V
DS
= 80V, V
GS
= 0V
1.0
T
J
=
55°C
5.0
I
GSS
±100 nA
Gate Threshold Voltage
V
GS(th)
1.2 1.7 2.5 V
R
DS(ON)
5.4 6.6
m
R
DS(ON)
6.6 8.0
m
g
FS
112 S
V
SD
0.71 1.0 V
I
S
121 A
C
iss
2604 pF
C
oss
567 pF
C
rss
9.6 pF
R
g
1.8
Q
g
42 nC
Q
g
28 nC
Q
gs
6.5 nC
Q
gd
9.7 nC
t
D(on)
11.3 ns
t
r
17.6 ns
t
D(off)
46 ns
t
f
36 ns
t
rr
59 ns
Q
rr
107 nC
Symbol Unit
R
JA
°C/W
R
JC
°C/W
Notes:
A
Gate-Body Leakage Current
V
DS
= 0V, V
GS
= ±20V
Body Diode Reverse Recovery Time
I
F
= 20A, dI
F
/dt = 100A
/
s
Body Diode Reverse Recovery Charge
Zero Gate Voltage Drain Current
I
DSS
V
DS
= V
GS
, I
D
= 250A
Diode Continuous Current
V
GS
= 10V, I
D
= 20A
Forward Transconductance
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
JMSL1006AH
JMSL1006AK
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
= 250A, V
GS
= 0V
STATIC PARAMETERS
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
T
C
= 25°C
Static Drain-Source ON-Resistance
Input Capacitance
V
GS
= 0V, V
DS
= 50V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
(5)
Static Drain-Source ON-Resistance
V
GS
= 4.5V, I
D
= 15A
application board design.
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge (@V
GS
= 10V)
V
GS
= 0 to 10V
V
DS
= 75V, I
D
= 20A
Total Gate Charge (@V
GS
= 6.0V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
= 10V, V
DS
= 75V
R
L
= 3.75
,
R
GEN
= 6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
I
F
= 20A, dI
F
/dt = 100A
/
s
Parameter
SWITCHING PARAMETERS
(5)
2. This single-pulse measurement was taken under T
J_Max
= 175°C.
3. This single-pulse measurement was taken under the following condition [L = 100H, V
GS
= 10V, V
DS
= 50V] while its value is limited by
4. The power dissipation P
D
is based on T
J_Max
= 175°C.
5. This value is guaranteed by design hence it is not included in the production test.
T
J_Max
= 175°C.
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Typ.
Thermal Performance
Max.
48
1.24
40
0.95
Rev. 1.2
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 2 of 6