MSESD5Z5CL
Semiconductor
Compiance
www.msksemi.com
Pin1
Circuit Diagram
SOD-523
Pin2
Feature
80W peak pulse power per line (t
P
= 8/20μs)
SOD-523 package
Replacement for MLV(0603)
Bidirectional configurations
Protects one power or I/O port
Low clamping voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30kV(air), ±30kV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness: ≤3mil
Electrical characteristics per line@25℃( unless otherwisespecified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Peak Reverse Working Voltage
V
RWM
5
V
Breakdown Voltage
V
BR
I
T
= 1mA
5.8
7.8
V
Reverse Leakage Current
I
R
V
RWM
= 5V T=25℃
1.0
μA
Clamping Voltage
1)
V
C
TLP = 16A, t
p
= 100ns
9.0
V
Dynamic resistance
1)
R
DYN
0.15
Ω
Clamping Voltage
2)
V
C
I
PP
=10A
8
10
V
Junction Capacitance
C
J
V
R
=0V f = 1MHz
33
pF
Notes:
1.TLP parameter: Z
0
=50Ω, t
p
=100ns, t
r
=2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to 16A.
2.Non-repetitive current pulse, according to IEC61000-4-5.
Absolute maximum rating@25℃
Rating
Symbol
Value
Unit
Peak Pulse Power (t
p
=8/20μs)
P
pp
80
W
Operating Temperature
T
J
-55 to +150
℃
Storage Temperature
T
STG
-55 to +150
℃