www.msksemi.com
Applications
USB Ports
Smart Phones
Wireless Systems
Ethernet 10/100/1000 Base T
Features
350W peak pulse power (8/20μs)
Ultra low capacitance ：1.0pF typical
Ultra low leakage：nA level
Low Operating：3.3V,5V,8V,12V,15V,24V
Low clamping voltage
Protects one power line or data line
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
RoHS
Compliant
Mechanical Characteristics
Package: SOD-323
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Description
a 3.3V ~24V bi-directional TVS diode，
utilizing leading monolithic silicon technology to
provide fast response time and low ESD clamping
voltage, making this device an ideal solution for
protecting voltage sensitive high-speed data lines.
The has a low capacitance with a typical
value at 1pF,and complies with the IEC 61000-4-2
(ESD) standard with ±30kV air and ±30kV contact
discharge. It is assembled into a lead-free SOD-323
package. The small size, low capacitance and high
ESD surge protection make an ideal
choice to protect cell phone, wireless systems, and
communication equipment.
Dimensions and Pin Configuration
Circuit and Pin Schematic
Part Number Packaging Reel Size
3000/Tape & Reel 7 inch
Ordering Information
MSESDxxCI
MSESDxxCI
MSESDxxCI
MSESDxxCI
www.msksemi.com
Semiconductor
Compiance
MSESDxxCI