www.msksemi.com

Symbol Parameter

V

RWM

Peak Reverse Working Voltage

I

R

Reverse Leakage Current @ V

RWM

V

BR

Breakdown Voltage @ I

T

I

T

Test Current

I

PP

Maximum Reverse Peak Pulse Current

V

C

Clamping Voltage @ I

PP

P

PP

Peak Pulse Power

C

J

Junction Capacitance

I

F

Forward Current

V

F

Forward Voltage @ I

F

I

PP

I

V

C

V

BR

V

RW M

I

T

I

R

V

I

R

V

RW M

V

BR

V

C

I

T

I

PP

Feature

peak pulse power per line (

t

P = 8/20μs)

SOD-923 package

Replacement for MLV(0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

RoHS compliant

Transient protection for data lines to

IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Mechanical Characteristics

Lead finish:100% matte Sn(Tin)

Mounting position: Any

Qualified max reflow temperature:260℃

Device meets MSL 1 requirements

Pure tin plating: 7 ~ 17 um

Pin flatness:≤3mil

Electronics Parameter

Electrical characteristics per line@25℃ (unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Units

Peak Reverse Working Voltage

V

RWM

3.3 V

Breakdown Voltage

V

BR

I

t

= 1mA

5 V

Reverse Leakage Current

I

R

V

RWM

= 5V T=25℃

2.5 μA

Maximum Reverse Peak Pulse Current

I

PP

2.3

A

Clamping Voltage

V

C

19 V

Junction Capacitance

C

j

V

R

=0V f = 1MHz

12 18 pF

Absolute maximum rating@25℃

Rating Symbol Value Units

Peak Pulse Power (t

p

=8/20μs)

P

pp

44 W

Operating Temperature

T

J

-55 to +150 ℃

Storage Temperature

T

STG

-55 to +150

℃

I

PP

MAX, t

P

=8/20μs

SOD-923

MSESD9B3.3ST5G

www.msksemi.com

Semiconductor

Compiance

44W