TRANSISTOR (PNP)
FEATURES
Compliment to SS8550
MARKING: Y2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -1.5 A
P
C
Collector Power Dissipation 0.5 W
R
ΘJA
Thermal Resistance From
Junction To Ambient
250
℃/W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100μA, I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -0.1mA, I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100μA, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -40 V,I
E
=0
-0.1
μA
Collector cut-off current
I
CEO
V
CE
= -20V, I
B
=0
-0.1
μA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
μA
DC current gain
h
FE(1)
V
CE
= -1V, I
C
= -100mA
120
400
h
FE(2)
V
CE
= -1V, I
C
= -800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-800mA, I
B
= -80mA
-0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-800mA, I
B
= -80mA
-1.2
V
Base-emitter on voltage
V
BE(on)
Ic=-1V,V
CE
=-10mA
-1
V
Base-emitter positive favor voltage
V
BEF
I
B
=-1A
-1.55
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -50mA
100
MHz
output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
20
pF
CLASSIFICATION OF h
FE(1)
Rank
C
D
D1
D2
Range
120-200
160-300
200-350
300-400
Plastic-Encapsulate Transistors
1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
1
COMMON EMITTER
V =-1V
CE
T =100℃
a
T =25℃
a
-500uA
-450uA
COMMON
EMITTER
T =25℃
a
-400uA
-350uA
-300uA
-250uA
-200uA
-150uA
-100uA
I =-50uA
B
T =25℃
a
T =100℃
a
β=10
COLLECTOR-EMITTER SATURATION
CAPACITANCE
VOLTAGE
(mV)
DC CURRENT GAIN
FE
CE
C
V ——
I
V ——
I
C
C
BE
ob ib
V / V
BE
T
I
C a
C
a
-140
Static Characteristic
600
h ——
-120
-100
300
-80
100
-60
-40
30
-20
-0
-0.0 -0.5 -1.0 -1.5 -2.0
-2.5
10
-1
-3
-10
-30
-100
-300
-1000 -1500
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
-1.2
BEsat
C
-1000
CEsat
C
-1.0
-300
-0.8 -100
-0.6
-30
-0.4 -10
-0.2
-3
-0.0
-1
-3
-10
-30
-100
-300
-1000
-1500
-1
-1
-3
-10
-30
-100
-300
-1000
-1500
COLLECTOR CURRENT I (mA)
COLLECTOR CURRENT I (mA)
-1500
-1000
V ——
100
C / C ——
CB EB
-300
-100
-30
30
-10
-3
-1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
10
-0.2
-0.5
-1
-3
-10
20
BASE-EMMITER VOLTAGE V (mV)
REVERSE VOLTAGE V (V)
500
300
100
30
f ——
C
600
500
400
300
200
100
P —— T
10
-1 -3
-10
-30
-100
0
0 25 50 75 100 125 150
COLLECTOR CURRENT I (mA)
AMBIENT TEMPERATURE T (℃)
a
T =100℃
T =25℃
a
CE
V =-1V
COMMON EMITTER
T =100℃
a
T =25℃
a
β=10
V =-10V
CE
T =25℃
a
f=1MHz
I =0/I =0
E C
T =25℃
a
C
ib
C
ob
BASE-EMITTER SATURATION
COLLCETOR CURRENT
I
(mA)
VOLTAGE
V
(mV)
TRANSITION FREQUENCY
f (MHz)
COLLECTOR CURRENT
I (mA)
C
BEsat
T
C
COLLECTOR POWER DISSIPATION
P (mW)
C
C
(pF)
V
CEsat
h
FE
I
I
C
C
2
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.