•
Small plas
t
ic SMD
package
•
Swi
t
ching speed
:
max
.
50 ns
•
General
applica
t
ion
•
Con
t
inuous reverse vol
t
age
:
max
.
200 V
•
Repe
t
i
t
ive peak reverse vol
t
age
:
max
.
250 V
•
Repe
t
i
t
ive peak
f
orward curren
t:
max
.
625 mA
.
P
I
N
DESCR
I
PT
I
ON
1
ca
t
hode
2
anode
APPL
I
CAT
I
ONS
•
General purpose swi
t
ching in e
.
g
.
sur
f
ace moun
t
ed
circui
t
s
.
DESCR
I
PT
I
ON
The BAS321 is a general purpose diode
f
abrica
t
ed in
planar
t
echnology and encapsula
t
ed in a plas
t
ic SOD323
package
.
ORDER
I
NG
I
NFORMAT
I
ON
TYPE
NUMBER
PACKAGE
NAME
DESCR
I
PT
I
ON
VERS
I
ON
BAS321
−
plas
t
ic sur
f
ace moun
t
ed package
;
2 leads
SOD323
L
I
M
I
T
I
NG VALUES
I
n accordance wi
t
h
t
he Absolu
t
e Maximum Ra
t
ing Sys
t
em (
I
EC 60134)
.
SYMBOL
PARAMETER
COND
I
T
I
ONS
M
I
N
.
MAX
.
UN
I
T
V
RRM
repe
t
i
t
ive peak reverse vol
t
age
−
250
V
V
R
con
t
inuous reverse vol
t
age
−
200
V
I
F
con
t
inuous
f
orward curren
t
see Fig
.
2
;
no
t
e 1
−
250
mA
I
FRM
repe
t
i
t
ive peak
f
orward curren
t
t
p
< 0
.
5 ms
; δ ≤
0
.
25
−
625
mA
I
FSM
non-repe
t
i
t
ive peak
f
orward curren
t
square wave
;
T
j
= 25 C prior
t
o
surge
;
see Fig
.
4
t
= 1
s
t
= 100
s
t
= 10 ms
−
−
−
9
3
1
.
7
A
A
A
P
tot
t
o
t
al power dissipa
t
ion
T
amb
= 25 C
;
no
t
e 1
−
300
mW
T
stg
s
t
orage
t
empera
t
ure
−
65
+150
C
T
j
junc
t
ion
t
empera
t
ure
−
150
C
Note
1
.
Device moun
t
ed on an FR4 prin
t
ed circui
t
-board
.
1
of
5
Copyright
©
All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
CHARACTER
I
ST
I
CS
T
j
= 25 C unless o
t
herwise speci
f
ied
.
SYMBOL
PARAMETER
COND
I
T
I
ONS
MAX
.
UN
I
T
V
F
f
orward vol
t
age
see Fig
.
3
I
F
= 100 mA
I
F
= 200 mA
1
1
.
25
V
V
I
R
reverse curren
t
see Fig
.
5
V
R
= 200 V
V
R
= 200 V
;
T
j
= 150 C
100
100
nA
A
C
d
diode capaci
t
ance
f
= 1 MHz
;
V
R
= 0
;
see Fig
.
6
2
pF
t
rr
reverse recovery
t
ime
when swi
t
ched
f
rom
I
F
= 30 mA
t
o
I
R
= 30 mA
;
R
L
= 100
Ω;
measured a
t
I
R
= 3 mA
;
see Fig
.
8
50
ns
THERMAL CHARACTER
I
ST
I
CS
SYMBOL
PARAMETER
COND
I
T
I
ONS
VALUE
UN
I
T
R
th(j-s)
t
hermal resis
t
ance
f
rom junc
t
ion
t
o soldering poin
t
T
s
= 90C
;
no
t
e 1
130
K
/
W
R
th(j-a)
t
hermal resis
t
ance
f
rom junc
t
ion
t
o ambien
t
no
t
e 2
366
K
/
W
Notes
1
.
Soldering poin
t
o
f
ca
t
hode
t
ab
.
2
.
Device moun
t
ed on an FR4 prin
t
ed circui
t
board
.
2
of
5
Copyright
©
All right reserved: Heyuan China Base Electronics Technology Co., Ltd.