Plastic-Encapsulate Thyristors
Silicon Controlled Rectifier
FEATURES
Current-I
GT
: 200
µ
A
I
TRMS
: 0.
8 A
VRRM/V
DRM
: MCR100-6: 400 V
MCR100-8: 600 V
Operating
and
storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS（Ta=25℃ unless otherwise specified）
Parame
ter Symbol Test conditions Min Max Unit
On state v
oltage
*
V
TM
I
TM
=1A
1.7 V
Gate trigger volt
age
V
GT
V
AK
=7V
0.8 V
Peak Repe
titive forward and reverse
blocking voltage
MCR100-6
MCR100-8
V
DRM
AND
V
RRM
I
DRM
= 10 µA
400
600
V
Peak forward
or reverse blocking
Current
I
DRM
I
RRM
V
AK
= Rated
V
DRM
or V
RRM
10 µA
Holding curre
nt
I
H
I
HL
= 20mA
,VAK = 7 V 5
mA
A2 5 15 µA
A1 15 30 µA
A 30 80 µA
Gate trigger current
I
GT
B
V
AK
=7V
80 200 µA
* Forward current applied for 1 ms maximum duration，
duty cycle≤1%。
SOT-23
1.KATHODE
2.
ANODE
3.
GATE
1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
25 50 75 100 125
0
100
200
300
400
25 50 75 100 125
0.2
0.3
0.4
0.5
0.6
0.7
0.0 0.5 1.0 1
.5 2.0 2.5 3.0
0
1
2
3
4
5
6
7
25 50 75 100 125
0
10
20
30
40
50
AMBIENT T
EMPERATURE T
a
( )
℃
Pulsed
I
T
=20mA
、
I
G
=50mA
HOLDING CURRENT I
H
(uA)
T
a
I
H
——
Pulsed
V
AK
=7V
GAT
E TRIGGER VOLTAGE V
GT
(V)
AMBIENT T
EMPERATURE T
a
( )
℃
T
a
V
GT
——
Pulsed
I
G
=50mA
T
a
=25
℃
T
a
=100
o
C
ON-
STATE VOLTAGE V
TM
(V)
ON-STATE CURRENT I
T
(A)
V
TM
I
T
——
Pulsed
V
AK
=7V
GATE TRIGGER CURRENT I
GT
(uA)
AMBIENT TEMPERATURE T
a
( )
℃
T
a
I
GT
——
Typical
Characteristics
2
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.