1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
)($785(
z
Epitaxial planar die construction
z
Ideal for low power amplification and switching
0$5.,1*

0$;,0805$7,1*67
D
XQOHVVRWKHUZLVHQRWHG
6\PERO3DUDPHWHU 9DOXH 8QLW
9
&%2
Collector-Base Voltage 60 V
9
&(2
Collector-Emitter Voltage 40 V
9
(%2
Emitter-Base Voltage 5 V
,
&
Collector Current -Continuous 0.2 A
3
&
Collector Power Dissipation 0.2 W
T
J
,7
VWJ
-55~+150
(/(&75,&$/&+$5$&7(5,67,&67D XQOHVVRWKHUZLVHVSHFLILHG
3DUDPHWHU
6\PERO 7HVW
FRQGLWLRQV 0LQ7\S0D[

8QLW
&ROOHFWRUEDVHEUHDNGRZQYROWDJH
V
(BR)CBO
I
C
=10A,I
E
=0 60 V
&ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH
V
(BR)CEO
I
C
=1mA,I
B
=0 40 V
(PLWWHUEDVHEUHDNGRZQYROWDJH
V
(BR)EBO
I
E
=10A,I
C
=0 5 V
&ROOHFWRUFXWRIIFXUUHQW
I
CBO
V
CB
=30V,I
E
=0 0.05 A
(PLWWHUFXWRIIFXUUHQW
I
EBO
V
EB
=5V,I
C
=0 0.05 A
h
FE(1)
V
CE
=1V,I
C
=0.1mA 40
h
FE(2)
V
CE
=1V,I
C
=1mA 70
h
FE(3)
V
CE
=1V,I
C
=10mA 100 300
h
FE(4)
V
CE
=1V,I
C
=50mA 60
'&FXUUHQWJDLQ
h
FE(5)
V
CE
=1V,I
C
=100mA 30
V
CE(sat)1
I
C
=10mA,I
B
=1mA 0.2 V
&ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH
V
CE(sat)2
I
C
=50mA,I
B
=5mA 0.3 V
V
BE(sat)1
I
C
=10mA,I
B
=1mA 0.65 0.85 V
%DVHHPLWWHUVDWXUDWLRQYROWDJH
V
BE(sat)2
I
C
=50mA,I
B
=5mA 0.95 V
7UDQVLWLRQIUHTXHQF\
f
T
V
CE
=20V,I
C
=10mA,f=100MHz 300 MHz
&ROOHFWRURXWSXWFDSDFLWDQFH
C
ob
V
CB
=5V,I
E
=0,f=1MHz pF
'HOD\WLPH
t
d
35 ns
5LVHWLPH
t
r
V
CC
=3V, V
BE(off)
=-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
35 ns
6WRUDJHWLPH
t
200ns
)DOOWLPH
t
f
V
CC
=3V, I
C
=10mA
I
B1
=-I
B2
=1mA
50 ns
&ROOHFWRUFXWRII��FXUUHQW
I
C
V
C
=30V,

=

0.05 A
KAP
Operation Junction and
Storage Temperature Range

!"
2
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
0.1 1 10 100
0
100
200
300
400
1 10 100
10
100
0.1 1 10
9
110
100
200
300
0 25 50 75 100 125 150
0
50
100
150
200
250
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
110100
0.0
0.4
0.8
1.2
048121620
0
20
40
60
80
100
f
T
—— I
C
h
FE
——
COMMON EMITTER
V
CE
=1V
3
30
0.3
T
a
=100
ć
T
a
=25
ć
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
I
C
30
300
303
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
=10
T
a
=25
ć
T
a
=100
ć
I
C
V
CEsat
——
600
200
1
3
3
0.3
20
C
ob
C
ib
REVERSE VOLTAGE V (V)
f=1MHz
I
E
=0/I
C
=0
T
a
=25
ć
V
CB
/ V
EB
C
ob
/ C
ib
——
CAPACITANCE C (pF)
3
30
60
V
CE
=20V
T
a
=25
ć
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
COLLECTOR POWER DISSIPATION
P
C
(mW)
AMBIENT TEMPERATURE T
a
( )
ć
P
C
—— T
a
V
BE
I
C
——
30
3
0.3
T
a
=25
ć
T
a
=100
ć
COMMON EMITTER
V
CE
=1V
COLLECTOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
30
3
=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
T
a
=25
ć
T
a
=100
ć
300
I
C
V
BEsat
——
Static Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
500uA
450uA
400uA
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
COMMON
EMITTER
T
a
=25
ć
\SLFDO&KDUDFWHULVWLFV
7