2N7002
K
W
www.doeshare.net
Page
o
f
5
Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
Parameter Symbol Limit Unit
Drain-source Voltage V
DS
60 V
Gate-source Voltage V
GS
±20 V
Drain Current T
A
=25℃ @ Steady State I
D
340 mA
Pulsed Drain Current
A
IDM 800 mA
Total Power Dissipation @ T
A
=25℃ P
D
0.2 W
Thermal Resistance Junction-to-Ambient @ Steady
State
R
θJA
625 ℃/ W
Junction Temperature T
J
150 ℃
Junction and Storage Temperature Range T
STG
-55～+150 ℃
2N7002KW
N
-
Channel
MOSFET
General description
N-Channel MOSFET
FEATURES
• Voltage controlled small signal switch
• High density cell design for Low RDS(on)
• Rugged and reliable
• High saturation current capability
• ESD protected
FEATURES
• Load switch for Portable Devices
• DC-DC Converter
V(BR)DSS
RDS(ON)MAX
ID
60V
2.5Ω@10V
340mA
3Ω@4.5V
SOT-323
Device Marking ： 7002 or 72K
2N7002
K
W
www.doeshare.net
Page
o
f
5
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Parameter Symbol
Conditions Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage B
VDSS
V
GS
= 0V, I
D
=250μA 60
V
Zero Gate Voltage Drain Current I
DSS
V
DS
=48V,V
GS
=0V
1 μA
Gate-Body Leakage Current I
GSS1
V
GS
= ±20V, V
DS
=0V
±10
μA
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
=250μA 1.0 1.3 2.5 V
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 10V, I
D
=500mA
0.9 2.5 Ω
V
GS
= 4.5V, I
D
=200mA
1.1 3.0
Diode Forward Voltage (2) V
SD
I
S
=300mA,V
GS
=0V
1.5 V
Pulsed Diode Forward Voltage (1) I
SM
0.53
A
Maximum Diode Continuous
Current
I
S
0.2 A
Dynamic Parameters
Input Capacitance C
iss
V
DS
=10V,V
GS
=0V,f=1MHZ
40
pF Output Capacitance C
oss
30
Reverse Transfer Capacitance C
rss
10
Switching Parameters
Turn-on Delay Time t
D
(on)
V
GS
=10V,V
DD
=50V, R
G
=50Ω
R
GS
=50Ω, R
L
=250Ω
10 ns
Turn-off Delay Time t
D
(off)
15
Reverse recovery Time trr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dI
S
/dt=-100A/μs
30
ns
Reverse recovery Time Charge Qr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dI
S
/dt=-100A/μs
30
nC
1. Repetitive rating˖Pluse width limited by junction temperature.
2. Pulse Test : Pulse width≤300μs, duty cycle≤2%.
3. Guaranteed by design, not subject to production testing.