2
N7002KDW
www.doeshare.net
Absolute Maximum Ratings(Ta=25℃ unless otherwise specified)
Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
* Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%.
** These parameters have on way to verify.
2N7002KDW
SOT
-
363 Plastic
-
Encapsulate
MOSFET
General description
SOT-363 Plastic-Encapsulate MOSFET
FEATURES
• High density cell design for low R
DS(ON)
.
• Voltage controlled small signal switch.
• Rugged and reliable.
• High saturation current capability.
• ESD protected
• Load Switch for Portable Devices.
• DC/DC Converter.
• SOT-363 Small Outline Plastic Package
• Epoxy UL: 94V-0
• Mounting Position: Any
Parameters
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
340
mA
Power Dissipation
P
D
150
mW
Junction Temperature T
j
150
℃
Storage Temperature Tstg
-55~+150
℃
Thermal Resistance From Junction to Ambient RθJA
833
℃/W
Parameter Symbols
Test Condition
Limits
Unit
Min
Typ
Max
Drain-Source Breakdown Voltage
VDS
VGS=0V, ID=250uA
60
V
Gate-Threshold voltage*
Vth(GS)
VDS=VGS, ID=1mA
1
1.3
2.5
V
Gate-body Leakage
IGSS1
VDS=0V, VGS=±20V
±10
uA
Zero Gate Voltage Drain current
IDSS
VDS=48V, VGS=0V
1
uA
Drain-Source On-Resistance*
RDS(ON)
VGS=10V, ID=500mA
0.9
5
Ω
VGS=4.5V, IC=200mA
1.1
5.3
Diode Forward voltage
VSD
IS=300mA, VGS=0V
1.50
V
Input capacitance**
Ciss
VDS=10V, VGS=0V,f=1MHz
40
pF
Output capacitance**
Coss
30
Reverse Transfer capacitance**
Crss
10
SWITCHING TIME
Turn-on Time**
td(on)
VDD=50V, RL=250Ω, VGS
=10V,
RGS=50Ω, RG=50Ω
10
ns
Turn-off Time**
td(off)
15
Reverse recovery Time
trr
VGS=0V, IS=300mA, VR=25V,
Dis/dt=-100a/uS
30
ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO
Igs=±1mA(Open Drain)
±21.5
±30
V
DEVICE MARKING: 72K
2
N7002KDW
www.doeshare.net
SOT-363 PACKAGE OUTLINE Plastic surface mounted package
Precautions: PCB Design (Recommended land dimensions for SOT-363 diode. Electrode patterns for PCBs)