2N7002
T
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Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Off Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=10uA 60
Volts
IGSS Gate-Body Leakage V
DS
=0V, V
GS
=±20V
±1 uA
IDSS Zero Gate Voltage Drain Current V
DS
=60V, V
GS
=0V
100 nA
2N7002T
N-Channel MOSFET
General description
N-Channel MOSFET
FEATURES
• Low On-resistance
• Low Gate Threshold Voltage
• Low Input capacitance
• RoHS Compliant
• Green EMC
• Matte Tin(Sn) Lead Finish
• Weight: approx. 0.002g
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
DS
Drain-Source Voltage
60
V
V
GS
Continuous Gate-Source Voltage
±20V
V
I
D
Continuous Drain Current
115
mA
P
D
Power Dissipation
150
mW
RθJA
Thermal Resistance from Junction to Ambient
833
°C /W
TSTG
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
+150
°C
2N7002
T
www.doeshare.net
On Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
Vth(GS) Gate-Threshold Voltage V
DS
= V
GS
, I
D
=250uA 1
2.5 Volts
ID(ON) On-state Drain Current V
GS
=10V, V
DS
=7V 500
mA
RDS(on) Drain-Source On-Resistance
V
GS
=10V, I
D
=500mA
7.5 Ω
V
GS
=5V, I
D
=50mA
7.5 Ω
g
fs
Forward Trans Conductance V
DS
=10V, I
D
=200mA 80
500 ms
VDS(on) Drain-Source On-Voltage
V
GS
=10V, I
D
=500mA
3.75 V
V
GS
=5V, I
D
=50mA
0.375
V
VSD Diode Forward Voltage I
S
=250mA, V
GS
=0V
1 V
Dynamic Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
Ciss Input Capacitance
V
DS
= 25V, V
GS
= 0V, f
= 1.0MHz
-- -- 50 pF
Coss Output Capacitance -- -- 25 pF
Crss Reverse Transfer Capacitance -- -- 5.0 pF
Switching Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
tD(on) Turn-on Time
V
DD
=10V, R
L
=20Ω,
I
D
=500mA, V
GEN
=10V,
R
G
= 10Ω
-- 5.6 -- nS
tD(off) Turn-off Time -- 25 -- nS