D
N
3019KT
www.doeshare.net
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Off Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=10uA 30
Volts
IGSS Gate-Body Leakage V
DS
=0V, V
GS
=±20V
±1 uA
IDSS Zero Gate Voltage Drain Current V
DS
=30V, V
GS
=0V
1 µA
DN3019KT
N-Channel MOSFET
General description
N-Channel MOSFET
FEATURES
• Low On-resistance
• Fast Switching Speed
• Low Voltage Drive Makes This Device
• Ideal for Portable Equipment
• Easily Designed Drive Circuits
• Easy to Parallel
• RoHS Compliant & Green EMC
• Matte Tin(Sn) Lead Finish
• Weight: approx. 0.002g
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Continuous Gate-Source Voltage
±20V
V
I
D
Continuous Drain Current
100
mA
P
D
Power Dissipation
150
mW
RθJA
Thermal Resistance from Junction to Ambient
833
°C /W
TSTG
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
+150
°C
D
N
3019KT
www.doeshare.net
On Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
Vth(GS) Gate-Threshold Voltage V
DS
= 3V, I
D
=100uA 0.8
1.5 Volts
RDS(on) Drain-Source On-Resistance
V
GS
=4V, I
D
=10mA
8 Ω
V
GS
=2.5V, I
D
=1mA
13 Ω
g
fs
Forward Trans Conductance V
DS
=3V, I
D
=10mA 20
ms
VSD Drain-Source Diode Forward Voltage I
S
=115mA, V
GS
=0V
1.2 V
Dynamic Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
Ciss Input Capacitance
V
DS
= 5V
V
GS
= 0V f
= 1.0MHz
13
pF
Coss Output Capacitance
9
pF
Crss Reverse Transfer Capacitance
4
pF
Switching Characteristics
Symbol
Parameter Test Condition
Limits
Unit
Min Typ Max
tD(on) Turn-on Time
V
DD
=5V, R
L
=500Ω,
I
D
=10mA, V
Gs
=5V,
R
G
= 10Ω
15
nS
tD(off) Turn-off Time
80
nS