DN
3541
K
M
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Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-source Voltage V
DS
30 V
Gate-source Voltage V
GS
±20
V
Drain Current I
D
100
mA
Pulsed Drain Current
A
IDM 1.5 A
Total Power Dissipation @ T
A
=25℃
P
D
0.15 W
Thermal Resistance Junction-to-Ambient @ Steady State R
θ
JA 357
℃/ W
Junction and Storage Temperature Range TJ ,TSTG
-55～+150 ℃
DN3541KM
N-Channel Enhancement Mode Field Effect Transistor
General description
N-Channel Enhancement Mode Field Effect Transistor
Features:
• VDS 30V
• ID 100mA
• RDS(ON)( at VGS=4.5V) ＜8.0 ohm
• RDS(ON)( at VGS=2.5V) ＜13.0 ohm
• ESD Protected Up to 3.0KV (HBM)
Applications
• Trench Power LV MOSFET technology
• High Power and current handing capability
• Load/Power Switching
• Interfacing Switching
• Logic Level Shift
Device Marking Code:
Device Type
Device Marking
DN3541KM
K
N
DN
3541
K
M
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Electrical Characteristics (T
J
=25℃ unless otherwise noted)
Parameter Symbol
Conditions Min Typ Max
Units
Static Parameter
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
=250μA 30
V
Zero Gate Voltage Drain Current IDSS V
DS
=20V,V
GS
=0V
1 μA
Gate-Body Leakage Current IGSS
V
GS
= ±20V, V
DS
=0V
±2.0
μA
V
GS
= ±16V, V
DS
=0V
��200
nA
Gate Threshold Voltage VGS(th) V
DS
= V
GS
, I
D
=250μA 0.8 1.1 1.5 V
Static Drain-Source On-Resistance RDS(ON)
V
GS
= 4.5V, I
D
=100mA
2.5 8.0 Ω
V
GS
= 2.5V, I
D
=10mA
3.0 13.0
Diode Forward Voltage
C
V
SD
I
S
=100mA,V
GS
=0V
1.2 V
Maximum Body-Diode Continuous
Current
I
S
100 mA
Dynamic Parameters
B
Input Capacitance C
iss
V
DS
=30V,V
GS
=0V,f=1MHZ
18
pF Output Capacitance C
oss
12
Reverse Transfer Capacitance C
rss
7
Switching Parameters
B
Total Gate Charge Q
g
V
GS
=10V,V
DS
=30V,I
D
=0.1A
1.7
nC Gate Source Charge Q
gs
0.19
Gate Drain Charge Q
gd
0.27
Turn-on Delay Time tD(on)
V
GS
=10V,V
DD
=30V,R
G
=6Ω,I
D
=0.1A
5
ns
Turn-off Delay Time tD(off)
17
Notes:
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. These parameters have no way to verify.
C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%.