DP2121KM
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Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
V
DS
-20
V
Gate-source Voltage
V
GS
±12
V
Drain Current
I
D
-0.45
A
Pulsed Drain Current
A
IDM
-0.9
A
Total Power Dissipation @ T
A
=25℃
P
D
0.15
W
Thermal Resistance Junction-to-Ambient @ Steady State
R
θ
JA
833
℃/ W
Junction and Storage Temperature Range
TJ ,TSTG
-55～+150
℃
DP2121KM
P-Channel Enhancement Mode Field Effect Transistor
General description
P-Channel Enhancement Mode Field Effect Transistor
Features:
• V
DS
= -20V
• I
D
-0.45 A
• Switching Low Rds(on)
• Lead free in compliance with EU RoHs 2011/65/EU Directive.
• Gree molding compound as per IEC61249 Std.
Mechanical Data
• Case SOT-723 Package
• Terminals :Solderable per MIL-STD-750,Method 2026
• Approx: Weight:0.00005 ounce , 0.0013 gram
Device Type
Device Marking
DP2121KM
KD
DP2121KM
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Electrical Characteristics (T
J
=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
V
DS
=-20V,V
GS
=0V
-1
μA
Gate-Body Leakage Current
IGSS
V
GS
= ±12V, V
DS
=0V
±20
μA
Gate Threshold Voltage
VGS(th)
V
DS
= V
GS
, I
D
=250μA
-0.35
-0.77
-1.1
V
Static Drain-Source On-Resistance
RDS(ON)
V
GS
=-4.5V, I
D
=-0.45A
0.40
0.52
Ω
V
GS
=-2.5V, I
D
=-0.35A
0.55
0.70
V
GS
=-1.8V, I
D
=-0.25A
0.80
0.95
Diode Forward Voltage
C
V
SD
I
S
=150mA,V
GS
=0V
-0.85
-1.2
V
Dynamic Parameters
B
Input Capacitance
C
iss
V
DS
=-16V, V
GS
=0V,f=1MHZ
115
pF
Output Capacitance
C
oss
15
Reverse Transfer Capacitance
C
rss
9
Switching Parameters
B
Turn-on Delay Time
tD(on)
V
GS
=-4.5V, V
DD
=-10V, R
G
=10Ω,
I
D
=0.2A
9.2
ns
Turn-on Rise Time
tr
6
Turn-off Delay Time
tD(off)
33
Turn-off Fall Time
tf
21
Notes:
A. Repetitive Rating: Pulse width limited by maximum junction temperature.
B. These parameters Guaranteed by design.
C. Pulse Test: Pulse Width≤300us, Duty Cycle≤2%.