Features
●Blocking voltage:800 to 1600v
●Three Phase Bridge and a Thyristor
●Isolated Module package
Applications
●Inverter for AC or DC motor control
●Current stabilized power supply
●Switching power supply
●Note: Products with logo or
are made by HY Electronic (Cayman) Limited.
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol Unit
ID A
IFSM A
I
2
t A
2
s
Visol V
Tvj
Tstg
Ms Nm
Weight g
Rth(j-c)
℃/W
Rth(c-s) ℃/W
Typ Max
/ 1.45 V
MDST200-*-B-92-00
Rev. 1, 21-Apr-2020
/ /
0.1
9
mA
Forward Voltage Drop, max
Repetitive Peak Reverse Current, max
Min
/
-40 to + 125
5±15％
360
0.12
To terminals(M4)
To terminals(M6)
Mt
Item
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Tvj =25℃,VRD=VRRM
IRD
Tvj =150℃,VRD=VRRM
T=25℃ IF=200A
VFM
Junction to Case
Case to Heatsink 0.10
℃
To heatsink(M6)
Operating Junction Temperature
Storage Temperature
Mounting Torque
2±15％
5±15％
Module (Approximately)
Thermal Impedance, max
Thermal Impedance, max
Nm
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
-40 to + 150
Characteristics
Three phase, full wave Tc=100℃
t=10mS Tvj =45℃
Values
200
2240
25080
3000
MDST200-12 1200V 1300V
MDST200-16 1600V 1700V
Package Outline Dimensions in Millimeters
TYPE
VRRM VRSM
MDST200-08 800V 900V
MDST200 SERIES
Three Phase Bridge
Reverse Voltage - 800 to 1600 Volts
Forward Current - 200 Amperes
Rating and Characteristic Curves
MDST200
Symbol Unit
ITAV A
ITSM A
I
2
t A
2
S
Visol V
Tvj ℃
Tstg ℃
di/dt A/us
dv/dt V/us
Rth(j-c) ℃/W
Rth(c-s) ℃/W
Min. Typ Max
/ / 1.65
V
IRRM/IDRM / / 30 mA
VTO
/ / 0.9
V
Rt
/ / 2
mΩ
VGT
/ / 3
V
IGT
/ / 150
m A
VGD
/ / 0.25
V
IGD
/ / 6
mA
IL
/ 300 600
mA
IH
/ 150 250
mA
tgd us
tq us
MDST200-*-B-92-00
Rev. 1, 21-Apr-2020
T
VJ
=T
VJM
T=25℃ I
T
=200A
VTM Peak On-State Voltage, max.
T
VJ
=T
VJM
Circuit commutated turn-off time
Required DC gate voltage , max
Required DC gate current , max
Latching current, max
T
VJ
=25℃,V
D
=6V
Holding current, max
T
VJ
=25℃
Gate controlled delay time
T
VJ
=25℃,R
G
=33Ω
T
VJ
=125℃,V
D
=2/3V
DRM
T
VJ
=125℃,V
D
=2/3V
DRM
Values
200
1900
18050
Operating Junction Temperature
3000
-40 to + 150
Item
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Characteristics
Tc=90℃,Single Phase half wave 180
0
conduction
Tvj =45℃ t=10mS(50Hz),, sine VR=0
Gate Trigger current, max
T
VJ
=T
VJM
,V
D
=2/3V
DRM
,linear voltage rise
Junction to Case
Critical Rate of Rise of Off-State Voltage, min
Thermal Impedance, max
T
VJ
=25℃,V
D
=6V
T
VJ
=25℃,V
D
=6V
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Case to Heatsink
Storage Temperature
Critical Rate of Rise of On-State Current
Thermal Impedance, max
Repetitive Peak Reverse Current, max
/Repetitive Peak Off-State Current,max
0.10
a.c.50HZ;r.m.s.;1min
1
100
T
VJ
=T
VJM
,V
D
=1/2V
DRM
, I
G
=100mA d
iG
/dt=0.1A/us
500
0.14
-40 to + 150
150
Threshold voltage
Slope resistance, max
Gate Trigger Voltage, max