2N3906
TRANSISTOR (PNP)
FEATURE
z PNP silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the NPN transistor 2N3904 is
Recommended
z This transistor is also available in the SOT-23 case with
the type designation MMBT3906
MAXIMUM RATINGS (Ta
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -0.2 A
P
C
Collector Power Dissipation 0.625 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -10μA, I
E
=0 -40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA , I
B
=0 -40 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
= -10μA, I
C
=0 -5 V
Collector cut-off current
I
CBO
V
CB
= -40 V,I
E
=0 -0.1 μA
Collector cut-off current
I
CEX
V
CE
= -30 V,V
BE(off)
=-3V -50 nA
Emitter cut-off current
I
EBO
V
EB
= -5 V , I
C
=0 -0.1 μA
h
FE1
V
CE
=-1 V, I
C
= -10mA 100 400
h
FE2
V
CE
=-1 V, I
C
= -50mA 60
DC current gain
h
FE3
V
CE
=-1 V, I
C
= -100mA 30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -50mA, I
B
= -5mA -0.4 V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -50mA, I
B
= -5mA -0.95 V
Transition frequency
f
T
V
CE
=-20V, I
C
= -10mA
f = 100MHz
250 MHz
Delay Time
td 35 ns
Rise Time
tr
V
CC
=-3V,V
BE
=-0.5V,
I
C
=-10mA,I
B1
=-1mA
35 ns
Storage Time
ts 225 ns
Fall Time
tf
V
CC
=-3V,Ic=-10mA
I
B1
=I
B2
=-1mA
75 ns
CLASSIFICATION OF h
FE1
Rank
O Y G
Range
100-200 200-300 300-400
TO-92
1.EMITTER
2.BASE
3. COLLECTOR
℃
1
JINLIN ELECTRONIC
2N3906
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
-1 -10 -100
10
100
1000
0 25 50 75 100 125 150
0
125
250
375
500
625
750
-1 -10 -100
-400
-600
-800
-1000
-1200
-0.1 -1 -10
10
-1 -10 -100
1000
-0 -2 -4 -6 -8 -10
-0
-20
-40
-60
-80
-100
-1 -10 -100
-10
-100
-1000
V
CB
/ V
EB
C
ob
/ C
ib
——
V
BE
I
C
——
I
C
h
FE
——
T
a
=100
℃
T
a
=25
℃
-30
-3
-0.3
COMMON EMITTER
V
CE
=-5V
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
Static Characteristic
-200
T
a
=100
℃
T
a
=25
℃
COMMON EMITTER
V
CE
=-1V
300
30
-30
-3
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
f
T
——
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
AMBIENT TEMPERATURE T
a
( )
℃
T
a
=100
℃
T
a
=25
℃
β=10
-200-30
-3
BASE-EMMITTER SATURATION
VOLTAGE V
BEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
3
1
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
Cob
Cib
-0.3
-20
-3
CAPACITANCE C (pF)
REVERSE BIAS VOLTAGE V (V)
300
100
-30
-3
COMMON EMITTER
V
CE
=-20V
T
a
=25℃
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
COMMON
EMITTER
T
a
=25
℃
-500uA
-350uA
-450uA
-300uA
-250uA
-400uA
-200uA
-150uA
-100uA
I
B
=-50uA
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
I
C
T
a
=25
℃
T
a
=100
℃
β=10
V
BEsat
——V
CEsat
—— I
C
I
C
-200
-300
-30
-30-3
COLLECTOR-EMMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
Typical Characteristics
2
2N3906