2N3904
TRANSISTOR (NPN)
FEA TURE
z NPN silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the PNP transistor 2N3906 is
Recommended
z This transistor is also available in the SOT-23 case with
the type designation MMBT3904
MAXIMUM RATINGS (Ta
=25℃ unless otherwise noted)
Symbol Para meter Value Unit
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current -Continuous 0.2 A
P
C
Collector Power Dissipation 0.625 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
=10μA, I
E
=0 60 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1mA , I
B
=0 40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 10μA, I
C
=0 6 V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0 0.1 μA
Collector cut-off current
I
CEO
V
CE
= 40V, I
B
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0 0.1 μA
h
FE1
V
CE
=1V, I
C
=10mA 100 400
h
FE2
V
CE
=1V, I
C
=50mA 60
DC current gain
h
FE3
V
CE
=1V, I
C
=100mA 30
Collector-emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA 0.3 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=50mA, I
B
=5mA 0.95 V
Transition frequency
f
T
V
CE
=20V,I
C
=10mA,f=100MHz 300 MH
Z
Delay Time
t
d
35 ns
Rise Time
t
r
V
CC
=3V,V
BE
=0.5V,
I
C
=10mA,I
B1
=1mA
35 ns
Storage Time
t
s
200 ns
Fall Time
t
f
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
50 ns
CLASSIFICATION OF h
FE1
Rank
O Y G
Ra nge
100-200 200-300 300-400
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
JINLIN ELECTRONIC
2N3904
10
10
100
1000
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
110100
100
1000
110100
10
100
1000
110100
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
0246810
0
20
40
60
80
100
0.1 1 10
0.1
1
10
300
70
f
T
—— I
C
5
30
2
COMMON
EMITTER
V
CE
=20V
T
a
=25
℃
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
Pc —— Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
AMBIENT TEMPERATURE T
a
( )℃
3000
β=10
V
CEsat
—— I
C
I
C
V
BEsat
——
T
a
=25
℃
T
a
=100
℃
30
3
200
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
COMMON EMITTER
V
CE
=1V
T
a
=25
℃
T
a
=100
℃
300
30
30
3
200
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
200
β=10
T
a
=100
℃
T
a
=25
℃
200
300
30
30
3
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
c
(mA)
V
BE
I
C
——
V
CB
/ V
EB
C
ob
/ C
ib
——
Ta=100
℃
Ta=25
℃
30
3
0.3
V
CE
=5V
COLLCETOR CURRENT I
C
(mA)
BASE-EMMITER VOLTAGE V
BE
(V)
Static Characteristic
I
C
h
FE
——
COMMON EMITTER
T
a
=25
℃
500uA
450uA
400uA
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
f=1MHz
I
E
=0/I
C
=0
Ta=25
℃
0.3
C
ob
C
ib
20
3
CAPACITANCE C (pF)
REVERSE BIAS VOLTAGE V (V)
2
Typical Characteristics
2N3904