Plastic-Encapsulate MOSFETS

FEA

TURE

z

High density cell design for Low R

DS

（

on

）

z

Voltage controlled small signal switch

z

Rugged and reliable

z High saturation current capability

MOSFET MAXIMUM RATINGS (T

a

= 25°C unless otherw

ise noted)

Symbol Parameter Value

Unit

V

DS

Drain-Source voltage

60 V

I

D

Drain

C

u

rre

nt 300

mA

P

D

Power Diss

ipation 0.15 W

T

J

Junctio

n

T

e

mperature 150

℃

T

stg

Storage Temperature -55-150

℃

R

θJA

Thermal Resistance fromJuncti

on to Ambient 833

℃ /W

z

ESD protected

V

GS

Gate-Source voltage

±20 V

MARKING

Equivalent Circuit

APPLICATION

z

z

Load Switch for Portable Devices

DC/DC Converter

V

(BR)DSS

R

DS(on)

MAX

I

D

60

V

5

Ω

@

10V

300m

A

5.3Ω

@

4.5V





1

2

3

6

5

4

72K

SOT-363

N-channel MOSFET

Paramete

r

Symbol

Test Condition

Min

Typ

Max

Units

Static Chara

cteristics

Drain-Source Breakd

own Voltage V

DS

V

GS

= 0V

, I

D

=2

50µA 60

V

Gate Th

reshold Voltage* V

GS(th)

V

DS

=V

GS

, I

D

=1

mA 1 1.3 2.5

V

Ze

ro Gate Voltage Drain Current I

DSS

V

DS

=48V,V

GS

= 0

V

1 µA

I

GSS1

V

GS

=±

20V, V

DS

= 0V

±10 µA

Gate –Source leaka

ge current

V

GS

= 4.5V, I

D

=200mA

1.1 5.3 Ω

Drain-Source On-Resista

nce* R

DS(on)

V

GS

=10V,I

D

=5

00mA

0.9 5 Ω

Diode

Forward Voltage V

SD

V

GS

=0V, I

S

=300mA

1.5 V

Recovered ch

arge Q

r

V

GS

=0

V,I

S

=

300mA,V

R

=

25V,

dl

s/dt=-100A/µs

30

nC

Dy

namic Characteristics**

Input Capa

citance C

iss

40 pF

Output Capacitance

C

oss

30 pF

Reverse Tr

ansfer Capacitance C

rss

V

DS

=

10V,V

GS

=0

V,f

=1

MHz

10 pF

Sw

itching Characteristics**

Tu

rn-On Delay Time t

d(on)

10 ns

Tu

rn-Off Delay Time t

d(o

ff)

V

GS

=

10V,V

DD

=

50V,R

G

=5

0Ω,

R

GS=50Ω, RL=250Ω

15 ns

Reverse reco

very Time t

rr

V

GS

=0

V,I

S

=

300mA,V

R

=

25V,

dl

s/dt=-100A/µ

s

30

ns

G

A

TE-SOURC

E ZENER DIODE

Gate-Source Breakd

own Voltage BV

GSO

I

gs

=±1mA (Ope

n Drain) ±21.5

±30 V

Notes :

*Pulse Te

st : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃

unless otherwise specified

1

of

3

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©

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：

Heyuan China Base Electronics Technology Co., Ltd.