TRANSISTOR (PNP)
FEATURES
z Compliment to 2N3904U
z Low current
z Low voltage
MARKING: 2A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -Continuous -0.2 A
P
C
Collector Power Dissipation 0.5 W
T
J
Junction Temperature 150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-10μA,I
E
=0 -40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 -40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10μA,I
C
=0 -6 V
Collector cut-off current
I
CBO
V
CB
=-30V,I
E
=0 -0.05 μA
EBO
V
EB
=-6V,I
C
=0 -0.05 μA
h
FE(1)
V
CE
=-1V,I
C
=-0.1mA 60
h
FE(2)
V
CE
=-1V,I
C
=-1mA 80
h
FE(3)
V
CE
=-1V,I
C
=-10mA 100 300
h
FE(4)
V
CE
=-1V,I
C
=-50mA 60
DC current gain
h
FE(5)
V
CE
=-1V,I
C
=-100mA 30
V
CE(sat)1
I
C
=-10mA,I
B
=-1mA -0.25 V
Collector-emitter saturation v
oltage
V
CE(sat)2
I
C
=-50mA,I
B
=-5mA -0.4 V
V
BE(sat)1
I
C
=-10mA,I
B
=-1mA -0.65 -0.85 V
Base-emitter saturation v
oltage
V
BE(sat)2
I
C
=-50mA,I
B
=-5mA -0.95 V
Transition frequenc
y
f
T
V
CE
=-20V,I
C
=-10mA,f=100MHz 250 MHz
Collector capacitance
C
c
V
CB
=-5V,I
E
=0,f=1MHz 4.5 pF
Emitter capacitance
Ce V
EB
=-0.5V,I
C
=0,f=1MHz 10 pF
Noise figure
NF
V
CE
=-5V,I
c
=-0.1mA,f=10Hz-15.7kHz,
R
S
=1KΩ
4 dB
Delay time
t
d
35 nS
Rise time
t
r
35 nS
Storage time
t
S
225 nS
Fall time
t
f
I
C
=-10mA , I
B1
=-I
B2
= -1mA
75 nS
I
CEX
V
CB
=-30V,VBE(off)=-3V -0.
05 μA
T
stg
Storage Temperature -55-150
℃
R
θ
JA
Thermal resist
ance from j
unction
to ambi
ent
250
℃/W
Emitter cut-off current
Collector ut-off current
Plastic-Encapsulate Transistors
1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
-0.1 -1 -10 -100
0
100
200
300
-10 -100
-10
-
100
-0.1 -1 -10
9
-1 -10
1000
0 25 50 75 100 125 150
0
100
200
300
400
500
600
-0.2 -0.4
-0.6 -0.8 -1.0 -1.2 -1.4
-0.1
-1
-10
-100
-1 -10 -10
0
-0.0
-0.4
-0.8
-1.2
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5
-0
-3
-6
-9
-12
-15
-18
-200
f
T
—— I
C
h
FE
—
—
COMMON EMITTER
V
CE
=-1V
-3
-30
-0.3
Ta=100
℃
Ta=25
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
I
C
-30
-300
-30
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
β=10
T
a
=25
℃
T
a
=100
℃
I
C
V
CEsat
——
-600
-200
1
3
-3
-0.3
-20
C
ob
C
ib
REVERSE VOLTAGE V (V)
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
V
CB
/ V
EB
C
ob
/ C
ib
——
CAPACITANCE C (pF
)
300
100
-3 -30
-80
V
CE
=-20V
T
a
=25
℃
TRANSITION FRE
QUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
CO
LLECT
O
R
POWER DISSIPATION
Pc (mW)
AMBIENT TE
MPERATURE Ta ( )
℃
Pc ——
Ta
-200
V
BE
I
C
——
-30
-3
-0.3
T
a
=25
℃
T
a
=100
℃
COMMON EM
ITTER
V
CE
=-1V
COLLECTOR CURRENT I
C
(mA)
BASE-EMMI
TER VOLTAGE V
BE
(V)
-30
-3
β=10
BASE-EMITTE
R SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
T
a
=25
℃
T
a
=100
℃
-200
I
C
V
BEsat
——
Stat
ic Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
-80uA
-72uA
-64uA
-56uA
-48uA
-40uA
-32uA
-24uA
-16uA
I
B
=-8uA
COMMON
EMITTER
T
a
=25
℃
a
2
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.