TRANSISTOR (PNP)
FEATURES
Complement ary to S9014
MARKING: M6
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage -50
V
V
CEO
Collector-Emitter Voltage
-45
V
V
EBO
Emitter-Base Voltage -5
V
I
C
Collector Current -Continuous
-0.1
A
P
C
Collector Power Dissipation
0.2
W
T
j
Junction Temperature
150
℃
T
stg
S torage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
µA
, I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -0.1mA, I
B
=0
-45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
µA
, I
C
=0
-5
V
Collector cut-off current
I
CB
O
V
CB
=-50V, I
E
=0
-0.1
µA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
µA
DC current gain
h
FE
V
CE
=-5V, I
C
= -1mA
200
450
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-100mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-100mA, I
B
=-10mA
-1
V
Transition frequency
f
T
V
CE
=-5V, I
C
= -10mA
f=
30MHz
150
MHz
1．BASE
2．EMITTER
SOT-23
3．COLLECTOR
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of
3
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All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
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Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.