TRANSISTOR (PNP)
FEATURES
Complementary to S9013
Excellent h
FE
linearity
MARKING: 2T1
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
-40 V
V
CEO
Collector-Emitter Voltage
-25 V
V
EBO
Emitte
r
-Base
V
olta
g
e
-5
V
I
C
Collector Current -Continuous
-500
mA
P
C
Collector Power Dissipation
300
mW
T
j
Junction Temperature
150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherw ise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
µA
, I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
µA
, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-40V, I
E
=0
-0.1
µA
Collector cut-off current
I
CEO
V
CE
=-20V, I
B
=0
-0.1
µA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
µA
DC current gain
h
FE
V
CE
=-1V, I
C
= -50mA
120
200
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-500mA, I
B
= -50mA
-0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-500mA, I
B
= -50mA
-1.2
V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA
f=
30MHz
150
MHz
Collector output capacitance
C
ob
V
CB
=
-
10V, I
E
=0, f=1MHz
5
pF
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
2
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.