Plastic-Encapsulate MOSFETS
N-Channel MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
60 V
5Ω
@
10V
340mA
5.3Ω
@
4.5V
FEATURE
High density cell design for Low R
DS(on)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
ESD protected
MARKING
APPLICATION
Load Switch for Portable Devices
DC/DC Converter
Equivalent Circuit
MOSFET MAXIMUM RATINGS (T
a
=25Я unless otherwise noted)
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage
60
V
V
GS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current
340
mA
I
DM
Pulsed Drain Current(note1)
800
mA
P
D
Power Dissipation
0.2
W
T
j
Junction Temperature
150
R
T
stg
Storage Temperature
-55~+150
R
R
șJA
Thermal Resistance from Junction to Ambient
625
Я
/W
1
of
4
Copyright
©
All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
C
unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source Breakdown Voltage
V (BR) DSS
VGS = 0V, ID =250μA
60
V
GateThreshold Voltage (note 2)
VGS(th)
VDS =V
GS
, ID =1mA
1
1.3
2.5
V
Zero Gate Voltage Drain Current
IDSS
VDS =48V,VGS = 0V
1
μA
Gate-Source Leakage Current
IGSS
VGS =±20V, VDS = 0V
±10
μA
Drain-Source On-Resistance (note 2)
RDS(on)
VGS =4.5V, ID =200mA
2.3
5.3
R
VGS =10V, ID =500mA
1.5
5
R
DYNAMIC PARAMETERS (note 3)
Input Capacitance
C
iss
VDS =10V,VGS =0V,f =1MHz
40
pF
Output Capacitance
C
oss
30
pF
Reverse Transfer Capacitance
C
rss
10
pF
SWITCHING PARAMETERS(note 3)
Turn-on Delay Time
td(on)
V
GS
=10V,V
DD
=50V, R
G
=50ȍ
R
GS
=50ȍ, R
L
=250ȍ
10
ns
Turn-off Delay Time
td(off)
15
ns
Reverse Recovery Time
trr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dIs/dt=-100A/us
30
ns
Recovered Charge
Qr
V
GS
=0V,I
S
=300mA,V
R
=25V
dIs/dt=-100A/us
30
nC
DRAIN-SOURCE DIODE
Diode Forward Voltage(note 2)
V
SD
I
S
=300mA, VGS = 0V
1.5
V
Continuous Diode Forward Current
I
S
0.2
A
Pulsed Diode Forward Current(note1)
I
SM
0.53
A
Notes :
1. Repetitive
rating
˖
Pluse
width
limited
by
junction
temperature.
2.
Pulse Test : Pulse width300μs, duty cycle”2%.
3.
Guaranteed by design, not subject to production testing.
2
of
4
Copyright
©
All right reserved: Heyuan China Base Electronics Technology Co., Ltd.