N-Channel Enhancement Mode Field Effect Transistor
Features
• Low on resistance R
DS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
MARKING: 72K
Absolute
Maximum Ratings
(T
a
=
25
O
C)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
± 20
V
Drain Current (Continuous)
I
D
300
mA
Drain Current (Pulse Width ≤ 10 µs)
I
DM
800
mA
Total Power Dissipation
P
tot
350
mW
Operating and Storage Temperature Range
T
j
, T
stg
- 55 to + 150
O
C
Characteristics at
T
a
=
25
O
C
Parameter
Symbol
Min.
Max.
Unit
Drain Source Breakdown Voltage
at I
D
= 10 µA
BV
DSS
60
-
V
Zero Gate Voltage Drain Current
at V
DS
= 60 V
I
DSS
-
1
µA
Gate Source Leakage Current
at V
GS
= ± 20 V
I
GSS
-
± 10
µA
Gate Threshold Voltage
at V
DS
= 10 V, I
D
= 250 µA
V
GS(th)
1
2.5
V
Static Drain Source On-Resistance
R
DS(ON)
-
-
3
4
Ω
at V
GS
= 10 V, I
D
= 500 mA
at V
GS
= 4.5 V, I
D
= 200 mA
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA
g
fs
80
-
mS
Input Capacitance
at V
DS
= 25 V, f = 1 MHz
C
iss
-
50
pF
Output Capacitance
at V
DS
= 25 V, f = 1 MHz
C
oss
-
25
pF
Reverse Transfer Capacitance
at V
DS
= 25 V, f = 1 MHz
C
rss
-
5
pF
1
of
3
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©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
2
of
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Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.