http://www.sh-greenpower.com Shanghai GreenPower Electronics Co.,Ltd. 1
2N7002KT
60V N-Channel MOSFET
Product Summary
V
(BR)DSS
R
DS(on)TYP
I
D
60V
0.9Ω@10V
0.34A
1.1Ω@4.5V
Feature
⚫ Trench Technology Power MOSFET
⚫ Low R
DS(ON)
⚫ Low Gate Charge
⚫ ESD Protected
Application
⚫ Load Switch
⚫ DC/DC Converter
MARKING:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain - Source Voltage
V
DS
60
V
Gate - Source Voltage
V
GS
±20
V
T
A
= 25℃
I
D
0.34
A
Pulsed Drain Current
2
I
DM
1.0
A
T
A
= 25℃
P
D
0.25
W
Thermal Resistance from Junction to Ambient
5
R
θJA
500
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
SOT-523
Schematic diagram
*
6
'
K72
2N7002KT
http://www.sh-greenpower.com Shanghai GreenPower Electronics Co.,Ltd. 2
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Off Characteristics
Drain - Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
60
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48V, V
GS
= 0V
1
µA
Gate - Body Leakage Current
I
GSS
V
GS
= ±20V, V
DS
= 0V
±5
µA
On Characteristics
3
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
1
1.5
2.5
V
Drain-source On-resistance
R
DS(on)
V
GS
= 10V, I
D
= 0.3A
0.9
2.5
Ω
V
GS
= 4.5V, I
D
= 0.2A
1.1
3
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
= 30V, V
GS
= 0V, f = 1MHz
23.7
pF
Output Capacitance
C
oss
5.3
Reverse Transfer Capacitance
C
rss
2.5
Gate Resistance
R
g
V
DS
= 0V, V
GS
= 0V, f = 1MHz
160
Ω
Switching Characteristics
Total Gate Charge
Q
g
V
DS
= 30V, V
GS
= 10V, I
D
= 0.3A
0.29
nC
Gate-source Charge
Q
gs
0.23
Gate-drain Charge
Q
gd
0.12
Turn-on Delay Time
t
d(on)
V
DD
= 30V, V
GS
= 10V,
R
L
= 100Ω, R
G
= 3Ω
3.5
ns
Turn-on Rise Time
t
r
3.2
Turn-off Delay Ttime
t
d(off)
12
Turn-off Fall Time
t
f
10
Source - Drain Diode Characteristics
Diode Forward Voltage
3
V
SD
V
GS
= 0V, I
S
= 0.3A
1.2
V
Notes :
1.The maximum current rating is limited by package.
2.Pulse Test : Pulse Width ≤ 10μs, duty cycle ≤ 1%.
3.Pulse Test : Pulse Width ≤ 300μs, duty cycle ≤ 2%.
4.The power dissipation P
D
is limited by T
J(MAX)
= 150°C.
5.Device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.