MMDT3904
FEATURES
z Epitaxial planar die construction
z
Ideal for low power amplification and switching
MARKING:
K6N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Volt
age 60 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage
6 V
I
C
Collector Current -Continuous 0.2 A
P
C
Collector Power Dissipation 0.2 W
Operation Junction and
Storage Temperature Range
T
J
,T
stg
-55~+150
ELECTRICAL
CHARA
CTERISTICS (T
a=25
℃ unless other
w
ise specified)
Parameter
Symbol Test conditions Min Typ Max Unit
Collector-base br
eakdown voltage
V
(BR)CBO
I
C
=10μA,I
E
=0 60 V
Collector-emitter brea
kdown voltage
V
(BR)CEO
I
C
=1mA,I
B
=0 40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10μA,I
C
=0
6
V
Collector cut-off cu
rrent
I
CBO
V
CB
=30V,I
E
=0 0.05 μA
Emitter cut-off current
I
EBO
V
EB
=5V,I
C
=0 0.05 μA
h
FE(1)
V
CE
=1V,I
C
=0.1mA 40
h
FE(2)
V
CE
=1V,I
C
=1mA 70
h
FE(3)
V
CE
=1V,I
C
=10mA 100 300
h
FE(4)
V
CE
=1
V
,
I
C
=
50mA 60
DC cu
rr
en
t g
a
in
h
FE(5)
V
CE
=1
V
,
I
C
=
100
mA 30
V
CE(sat)1
I
C
=10mA,I
B
=1mA 0.2 V
Co
llecto
r
-emitter satu
r
atio
n voltage
V
CE(sat)2
I
C
=50mA,I
B
=5mA 0.3 V
V
BE(sat)1
I
C
=10mA,I
B
=1mA 0.65 0.85 V
Base-emitter saturatio
n voltage
V
BE(sat)2
I
C
=
50mA,I
B
=
5
mA 0.95
V
T
r
a
n
s
ition
frequency
f
T
V
CE
=20V,I
C
=10mA,f=100MHz 300
MHz
Co
llecto
r
o
u
t
put capacitance
C
ob
V
CB
=5V,I
E
=0,f=1MHz 4 pF
Noise figure
NF V
CE
=5V,I
c
=0.1mA,f=1kHz,R
S
=1KΩ 5 dB
Delay time
t
d
35 nS
Rise time
t
r
V
CC
=3V, V
BE(off)
=-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
35 nS
Storage time
t
s
200 nS
Fall time
t
f
V
CC
=3V, I
C
=10mA
I
B1
=-I
B2
=1mA
50 nS
℃
Collector cut-off cu
rrent
I
CEX
V
CE
=30V,V
BE(off)
=3V 0.05 μA
SOT-363
DUAL TRANSISTOR (NPN+NPN)
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
1
Rev. - 2.1
www.js
cj-elec.com
0.1 1 10 100
0
50
100
150
200
250
300
0 25 50 75 100 125
150
0
100
200
300
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
110100
0
100
200
300
400
0.0 0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
12
14
0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
100
200
V
CE
= 1V
T
a
=100
o
C
T
a
=25
o
C
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
I
C
h
FE
——
COLLECTO
R POWER DISSIPATION
P
c
(mW)
AMBIENT T
EMPERATURE T
a
( )
℃
P
c
—— T
a
200
COLLECTOR CURRENT I
C
(mA)
BASE-EMITT
ER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25℃
T
a
=100
℃
β=10
I
C
V
BEsat
——
200
T
a
=25
℃
T
a
=100℃
β=10
V
CEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VO
LTAG
E V
CEsa
t
(mV)
COLLECTOR CURRENT I
C
(mA)
COMMO
N
EMITTER
T
a
=25
℃
70uA
63uA
56uA
49uA
42uA
35uA
28uA
21uA
14uA
I
B
=7uA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Stat
ic Characteristic
200
V
CE
=1V
T
a
=25
℃
T
a
=100
o
C
BASE-EMIT
TER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE
T
y
pical Characteristics
2
Rev. - 2.1
www.jscj-elec.com