www.jscj-elec.com AD-MMDT3904
Version 1.0 1 / 6 2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-MMDT3904 Plastic-Encapsulated Transistors
AD-MMDT3904 Dual transistor (NPN+PNP)
FEATURES
Epitaxial planar die construction
Ideal for low power amplification and switching
AEC-Q101 qualified
MARKING
K6N
www.jscj-elec.com AD-MMDT3904
Version 1.0 2 / 6 2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Collector-base voltage V
CBO
60 V
Collector-emitter voltage V
CEO
40 V
Emitter-base voltage V
EBO
5 V
Collector current -continuous I
C
0.2 A
Collector power dissipation P
C
0.2 W
Operating junction and storage temperature range T
j
, T
stg
-55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter Symbol Test condition Min Typ Max Unit
Collector-base breakdown voltage V
(BR)CBO
I
C
= 10μA, I
E
= 0 60 - -
V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= 1mA, I
B
= 0 40 - -
Emitter-base breakdown voltage V
(BR)EBO
I
E
= 10μA, I
C
= 0 5 - -
Collector cut-off current I
CEX
V
CE
= 30V, V
EB(OFF)
= 3V - - 50
nA
Base cut-off current I
EBO
V
EB
= 5V, I
C
= 0 - - 50
Collector cut-off current I
CBO
V
EB
= 30V, I
E
= 0 - - 50
DC current gain
H
FE(1)
V
CE
= 1V, I
C
= 0.1mA 40 - - -
H
FE(2)
V
CE
= 1V, I
C
= 1mA 70 - - -
H
FE(3)
V
CE
= 1V, I
C
= 10mA 100 - 300 -
H
FE(4)
V
CE
= 1V, I
C
= 50mA 60 - - -
H
FE(5)
V
CE
= 1V, I
C
= 100mA 30 - - -
Collector-emitter saturation voltage
V
CE(sat)1
I
C
= 10mA, I
B
= 1mA - - 0.2 V
V
CE(sat)2
I
C
= 50mA, I
B
= 5mA - - 0.3 V
Base-emitter saturation voltage
V
BE(sat)1
I
C
= 10mA, I
B
= 1mA 0.65 - 0.85 V
V
BE(sat)2
I
C
= 50mA, I
B
= 5mA - - 0.95 V
Transition frequency F
t
V
CE
= 20V, I
C
= 10mA, f =
100MHz
300 - - MHz
Collector output capacitance C
ob
V
CB
= 5V,I
E
= 0, f = 1MHz - - 4 pF
Noise figure NF
V
CE
= 5V, I
c
= 0.1mA, f = 1KHz,
R
g
= 1KΩ
- - 5 dB
Delay time T
d
V
CC
= 3V, V
BE
= -0.5V
I
C
= 10mA , I
B1
= -I
B2
= 1mA
- - 35 nS
Rise time T
r
- - 35 nS
Storage time T
s
V
CC
= 3V, I
C
= 10mA
I
B1
= -I
B2
= 1mA
- - 200 nS
Fall time T
f
- - 50 nS