www.jscj-elec.com AD-EMH11
Version 1.0 1 / 5 2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-EMH11 Digital Transistor (Built-in Resistors)
AD-EMH11 Dual Digital Transistor (NPN + NPN)
FEATURES
Two AD-DTC114E chips are built-in a package
Mounting possible with SOT-563 automatic mounting machines
��� Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half
AEC-Q101 qualified
MARKING :H11
www.jscj-elec.com AD-EMH11
Version 1.0 2 / 5 2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Supply voltage V
CC
50 V
Input voltage V
IN
-10~40 V
Output current
I
O
50
mA
I
C(MAX)
100
Power dissipation P
D
150 mW
Operating junction and storage temperature range T
j
, T
stg
-55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter Symbol Test condition Min Typ Max Unit
Input voltage
V
I(OFF)
V
CC
= 5V, I
O
= 100μA
0.5 - - V
V
I(ON)
V
O
= 0.3V, I
O
= 10mA - - 3 V
Output voltage V
O(ON)
I
O
/I
I
= 10mA/0.5mA - - 0.3 V
Input current I
I
V
I
= 5V - - 0.88 mA
Output current I
O(OFF)
V
CC
= 50V, V
I
= 0V - - 0.5
μ
A
DC current gain G
I
V
O
= 5V, I
O
= 5mA 30 - - -
Input resistance R
1
- 7 10 13
K
Ω
Resistance ratio R
2
/R
1
- 0.8 1 1.2 -
Transition frequency F
T
V
CE
= 10V, f = 100MHz, I
E
= 5mA - 250 - MHz