www.jscj-elec.com AD-2N3906
Version 1.0 1 / 6 2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-2N3906 Plastic-Encapsulated Transistor
AD-2N3906 Transistor (PNP)
FEATURES
PNP silicon epitaxial planar transistor for switching and
amplifier applications
As complementary type, the PNP transistor AD-2N3904 is
recommended
This transistor is also available in the SOT-23 case with
the type designation AD-MMBT3906
AEC-Q101 qualified
MARKING : 2N3906 Equivalent Circuit
2N3906 = Device code
XXX = Code
www.jscj-elec.com AD-2N3906
Version 1.0 2 / 6 2021-07-01
ORDERING INFORMATION
Part Number
Package
Packing method
Pack quantity
AD-2N3906 TO-92 Bulk 1000pcs/Bag
AD-2N3906-TA TO-92 Tape 2000pcs/Box
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector-base voltage V
CBO
-40 V
Collector-emitter voltage V
CEO
-40 V
Emitter-base voltage V
EBO
-5 V
Collector continuous current I
C
-200 mA
Collector power dissipation P
C
625 mW
Operating junction and storage temperature range T
j
, T
stg
-55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
6
Parameter Symbol Test condition Min
Typ
Max Unit
Collector
-base breakdown voltage V
(BR)CBO
I
C
= -10μA, I
E
= 0A
-40 - - V
Collector
-emitter breakdown voltage V
(BR)CEO
I
C
= -1mA,
B
= 0A -40 - - V
Emitter
-base breakdown voltage V
(BR)EBO
I
E
= -10μA, I
C
= 0A
-5 - - V
Collector
-base cut-off current I
CBO
V
CB
=-40V, I
E
= 0A - - -0.1 µA
Emitter
-base cut-off current I
EBO
V
EB
= -5V, I
C
= 0A - - -0.1 µA
Collector cut
-off current I
CEX
V
CE
= -30V, V
EB(off)
= -3V - - -0.05 µA
DC
current gain
h
FE(1)
V
CE
= -1V, I
C
= -10mA 100 - 300
-
h
FE(2)
V
CE
= -1V, I
C
= -50mA 60 - -
h
FE(3)
V
CE
= -2V, I
C
= -100mA 30 - -
Collector
-emitter saturation voltage V
CE(sat)
I
C
= -50mA, I
B
= -5mA - - -0.4 V
Base
-emitter saturation voltage V
BE(sat)
I
C
= -50mA, I
B
= -5mA - - -0.95 V
Transition frequency
f
T
V
CE
= -20V, I
C
= -10mA, f = 100MHz 250 - - MHz
Delay time
t
d
V
CC
= -3V, V
BE
= -0.5V,
I
C
= -10mA, I
B1
= -1mA
- - 35
ns
Rise time
t
r
- - 35
S
torage time t
s
V
CC
= -3V, I
C
= -10mA
I
B1
= I
B2
= -1mA
- - 225
F
all time t
f
- - 75