D25XB100

Bridge Diodes

1000V, 25A

Feature

・Compact SIP

・UL E142422

・Pb free terminal

・RoHS:Yes

OUTLINE

Package (House Name): 5S

Equivalent circuit

Absolute Maximum Ratings (unless otherwise specified : Tc=25℃)

Item Symbol Conditions Ratings Unit

Storage temperrature Tstg -55 to 150 ℃

Junction temperature Tj -55 to 150 ℃

Repetitive peak reverse voltage V 1000 V

Average forward current I (AV)

50Hz sine wave, Resistance load, With heatsink,

Tc=106℃

25 A

Average forward current I (AV)

50Hz sine wave, Resistance load, On glass-epoxy

substrate, Ta=25℃ ※

3.1 A

Surge forward current I

50Hz sine wave, Non-repetitive 1 cycle peak value,

Tj=25℃

350 A

Dielectric strength Vdis Terminals to case, AC 1 minute 2.5 kV

Mounting torque TOR (Recommended torque : 0.5N･m) 0.8 N･m

※︓See the original Specifications

RRM

FSM

Shindengen Electric Manufacturing Co., Ltd. 1/6 D25XB100_Rev.02(2022.03)

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item Symbol Conditions

Ratings

Unit

MIN TYP MAX

Forward voltage V IF=12.5A, Pulse measurement, per diode 1.05 V

Reverse current I VR=1000V, Pulse measurement, per diode 10 μA

Thermal resistance Rth(j-c) Junction to case, With heatsink 0.8 ℃/W

Thermal resistance Rth(j-l) Junction to lead, On glass-epoxy substrate ※ 5 ℃/W

Thermal resistance Rth(j-a) Junction to ambient, On glass-epoxy substrate ※ 23 ℃/W

※︓See the original Specifications

Shindengen Electric Manufacturing Co., Ltd. 2/6 D25XB100_Rev.02(2022.03)