SUD50N06-09L
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
www.szyxwkj.com
1
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
FEATURES
• 175 °C Junction Temperature
• Material categorization:
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t 10 s.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
60
0.0093 at V
GS
= 10 V
50
0.0122 at V
GS
= 4.5 V
50
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Gate-Source Voltage
V
GS
± 20 V
Continuous Drain Current (T
J
= 175 °C)
b
T
C
= 25 °C
I
D
50
A
T
C
= 100 °C
50
a
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
I
S
50
a
Avalanche Current
I
AS
50
Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH
E
AS
125 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
136
W
T
A
= 25 °C
3
b
, 8.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 sec
R
thJA
15 18
°C/W
Steady State
40 50
Maximum Junction-to-Case
R
thJC
0.85 1.1
SHENZHEN YIXINWEI TECHNOLOGY CO.,LTD
SUD50N06-09L
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
123
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0074 0.0093
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.0160
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
0.0200
V
GS
= 4.5 V, I
D
= 15 A
0.0122
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
60 S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2650
pFOutput Capacitance
C
oss
470
Reverse Transfer Capacitance
C
rss
225
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
47 70
nC
Gate-Source Charge
c
Q
gs
10
Gate-Drain Charge
c
Q
gd
12
Tur n - On D el ay Tim e
c
t
d(on)
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
10 20
ns
Rise Time
c
t
r
15 25
Turn-Off Delay Time
c
t
d(off)
35 50
Fall Time
c
t
f
20 30
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
V
SD
I
F
= 20 A, V
GS
= 0 V
11.5V
Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs
45 100 ns
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
www.szyxwkj.com
2