JMTI210P02A
JieJie Microelectronics CO. , Ltd Version : 1.0
-
1
-
Description
Package Marking and Ordering Information
Device Marking
Device
OUTLINE
Device Package
TUBE
(PCS)
Inner Box
(PCS)
Per Carton
(PCS)
JMTI210P02A
JMTI210P02A
TUBE
TO-251-3L
75
4,950
29,700
Absolute Maximum Ratings (T
C
=25℃ unless otherwise specified)
Symbol
Parameter
Units
V
DSS
Drain-Source Voltage
V
V
GSS
Gate-Source Voltage
V
I
D
Continuous Drain Current
T
C
= 25℃
A
T
C
= 100℃
A
I
DM
Pulsed Drain Current
note1
A
EAS
Single Pulsed Avalanche Energy
note2
mJ
P
D
Power Dissipation
T
C
= 25℃
W
R
θJC
Thermal Resistance, Junction to Ambient
℃/W
T
J
, T
STG
Operating and Storage Temperature Range
℃
JMT P-channel Enhancement Mode Power MOSFET
Features
-20V, -20A
R
DS(ON)
<16mΩ @ V
GS
=-4.5V
R
DS(ON)
<24mΩ @ V
GS
=-2.5V
Advanced Trench Technology
Provide Excellent R
DS(ON)
and Low Gate Charge
Lead free product is acquired
Application
Load Switch
PWM Application
Power management
100% UIS TESTED!
100% ΔVds TESTED!
TO-251-3L top view Marking and pin Assignment Schematic Diagram
JMTI210P02A
JieJie Microelectronics CO. , Ltd Version : 1.0
-
2
-
Electrical Characteristics (T
J
=25℃ unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
= -250μA
-20
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -20V, V
GS
=0V,
-
-
-1
μA
I
GSS
Gate to Body Leakage Current
V
DS
=0V, V
GS
= ±12V
-
-
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250μA
-0.4
-0.7
-1.0
V
R
DS(on)
Static Drain-Source on-Resistance
Note3
V
GS
= -4.5V, I
D
= -10A
-
12
16
mΩ
V
GS
= -2.5V, I
D
= -5A
-
17
24
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -10V, V
GS
=0V,
f=1.0MHz
-
2000
-
pF
C
oss
Output Capacitance
-
242
-
pF
C
rss
Reverse Transfer Capacitance
-
231
-
pF
Q
g
Total Gate Charge
V
DS
= -10V, I
D
= -6A,
V
GS
= -4.5V
-
16
-
nC
Q
gs
Gate-Source Charge
-
3
-
nC
Q
gd
Gate-Drain(“Miller”) Charge
-
4
-
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
= -10V, I
D
= -12A,
V
GS
= -4.5V,
R
GEN
=2.4Ω
-
14
-
ns
t
r
Turn-on Rise Time
-
79
-
ns
t
d(off)
Turn-off Delay Time
-
76
-
ns
t
f
Turn-off Fall Time
-
76
-
ns
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward
Current
-
-
-20
A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-80
A
V
SD
Drain to Source Diode Forward
Voltage
V
GS
=0V, I
S
= -20A
-
-0.8
-1.2
V
trr
Body Diode Reverse Recovery Time
IF=-2A,
di/dt=-100A/μs
-
180
-
ns
Qrr
Body Diode Reverse Recovery
Charge
-
300
-
nC
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : T
J
=25℃,V
DD
=-10V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=-12A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%