2020. 02. 10 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N3906U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
MM
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Type Name
Marking
Lot No.
ZA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
·Excellent DC Current Gain Linearity.
·Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
·Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=-5V.
·Complementary to 2N3904U.
·Suffix U : Qaulified to AEC-Q101.
ex) 2N3906U-RTK/H
U
MAXIMUM RATING (Ta=25
℃℃
)
2020. 02. 10 2/4Revision No : 5
ELECTRICAL CHARACTERISTICS (Ta=25
℃℃
)
2N3906U
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
V
CE
=-30V, V
EB
=-3V
- - -50 nA
Base Cut-off Current
I
BL
V
CE
=-30V, V
EB
=-3V
- - -50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10μA, I
E
=0
-40 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10μA, I
C
=0
-5.0 - - V
DC Current Gain *
h
FE
(1) V
CE
=-1V, I
C
=-0.1mA
60 - -
h
FE
(2) V
CE
=-1V, I
C
=-1mA
80 - -
h
FE
(3) V
CE
=-1V, I
C
=-10mA
100 - 300
h
FE
(4) V
CE
=-1V, I
C
=-50mA
60 - -
h
FE
(5) V
CE
=-1V, I
C
=-100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1I
C
=-10mA, I
B
=-1mA
- - -0.25
V
V
CE(sat)
2I
C
=-50mA, I
B
=-5mA
- - -0.4
Base-Emitter Saturation Voltage *
V
BE(sat)
1I
C
=-10mA, I
B
=-1mA
-0.65 - -0.85
V
V
BE(sat)
2I
C
=-50mA, I
B
=-5mA
- - -0.95
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
250 - - MHz
Collector Output Capacitance
C
ob
V
CB
=-5V, I
E
=0, f=1MHz
- - 4.5 pF
Input Capacitance
C
ib
V
BE
=-0.5V, I
C
=0, f=1MHz
--10pF
Input Impedance
h
ie
V
CE
=-10V, I
C
=-1mA, f=1kHz
2.0 - 12
k
Ω
Voltage Feedback Ratio
h
re
1.0 - 10 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
3.0 - 60
Noise Figure NF
V
CE
=-5V, I
C
=-0.1mA,
Rg=1kΩ, f=10Hz～15.7kHz
- - 4.0 dB
Switching Time
Delay Time
t
d
V
out
Total 4pF
C
10kΩ
275Ω
V =-3.0V
CC
300ns
-10.6V
0.5V
0
t ,t < 1ns, Du=2%
r
in
V
f
--35
nS
Rise Time
t
r
--35
Storage Time
t
stg
20μs
1N916
or equiv.
-10.9V
9.1V
V
out
Total 4pF
C
V =-3.0V
CC
275Ω
10kΩ
V
in
0
t ,t < 1ns, Du=2%
rf
- - 225
Fall Time
t
f
--75
Ω
μ