MMBT
3904
www.doeshare.net
. Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
Parameters Symbol Value Unit
Collector-Base Voltage VCBO
60
V
Collector-Emitter Voltage VCEO
40
V
Emitter -Base Voltage VEBO
6
V
Collector Current-Continuous IC
200
mA
Collector Power Dissipation PC
200
mW
Junction Temperature Tj
150
℃
Storage Temperature Tstg
-55-+150
℃
Thermal resistance From junction to ambient RθJA
625
℃/W
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Parameter Symbols
Test Condition
Limits
Unit
Min
Max
Collector-base breakdown voltage
V(BR)CBO
IC=10uA, IE=0
60
V
Collector-
emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10uA, IC=0
6
V
Collector cut-off current
ICEX
VCE=30V, VEB(off)=3V
50
nA
Collector cut-off current
ICBO
VCB=60V, IE=0
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
DC current gain
hFE(1)
VCE=1V, IC=10mA
100
300
hFE(2)
VCE=1V, IC=50mA
60
hFE(3)
VCE=1V, IC=100mA
30
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB=5mA
0.30
V
Base -emitter saturation voltage
VBE(sat)
IC=50mA, IB=5mA
0.95
V
Transition frequency
fT
VCE=20V, IC=10mA,f=100MHz
300
MHz
Delay time
td
VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1
=1mA
35
nS
Rise time
tr
VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1
=1mA
35
nS
Storage time
ts
VCC=3V, IC=10mA, IB1=IB2=1mA
200
nS
Fall time
tf
VCC=3V, IC=10mA, IB1=IB2=1mA
50
nS
*Pulse test: pulse width≤300us, duty cycle≤2.0%
MMBT3904
SOT
-
23
Plastic
-
Encapsulate Transistors
(NPN)
General description
SOT-23 Plastic-Encapsulate Transistors(NPN)
FEATURES
• Complementary to MMBT3906
• Power Dissipation of 200mW
• High Stability and High Reliability
• SOT-23 Small Outline Plastic Package
• Epoxy UL: 94V-0
DEVICE MARKING CODE:
Device Type
Device Marking
MMBT3904 1AM
MMBT
3904
www.doeshare.net
CLASSIFICATION OF hFE(1)
HFE 100-300
RANK L H
RANGE 100-200 200-300
RATING AND CHARACTERISTIC CURVES