2N7002K
www.doeshare.net
Maximum Ratings & Thermal Characteristics (
Ratings at 25
℃
ambient temperature unless otherwise specified.)
Parameters
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
340
mA
Power Dissipation
PD
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-50-+150
℃
Thermal Resistance From Junction to Ambient
RθJA
357
℃/W
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Parameter
Symbols
Test Condition
Limits
Unit
Min
Typ
Max
Drain-Source Breakdown Voltage
VDS
VGS=0V, ID=250uA
60
V
Gate-Threshold voltage*
Vth(GS)
VDS=VGS, ID=1mA
1
1.3
2.5
V
Gate-body Leakage
IGSS1
VDS=0V, VGS=±20V
±10
uA
IGSS
VDS=0V, VGS=±10V
±200
nA
IGSS
VDS=0V, VGS=±5V
±100
nA
Zero Gate Voltage Drain current
I
DSS
V
DS
=48V, V
GS
=0V
1
uA
Drain-Source On-Resistance*
R
DS(ON)
V
GS
=10V, I
D
=500mA
0.9
5
Ω
V
GS
=4.5V, I
C
=200mA
1.1
5.3
Diode Forward voltage
V
SD
I
S
=300mA, V
GS
=0V
1.50
V
Input capacitance**
Ciss
VDS=10V, VGS=0V,f=1MHz
40
pF
Output capacitance**
Coss
30
Reverse Transfer capacitance**
Crss
10
Turn-on Time**
td(on)
VDD=50V, RL=250Ω, VGS=10V,
RGS=50Ω, RG=50Ω
10
ns
Turn-off Time**
td(off)
15
Reverse recovery Time
trr
VGS=0V, IS=300mA, VR=25V,
Dis/dt=-100a/uS
30
ns
Gate-Source Breakdown Voltage
BVGSO
Igs=±1mA(Open Drain)
±21.5
±30
V
Notes: * Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%.
** These parameters have on way to verify.
2N7002K
N-Channel MOSFET
General description
N-Channel MOSFET
FEATURES
• Voltage controlled small signal switch
• Rugged and reliable
• P-Channel Switch with Low RDS(on)
• High saturation current capability.
•
ESD protected
•
Load Switch for Portable Devices
• DC/DC Converter.
MECHANICAL DATA
•
SOT-23 Small Outline Plastic Package.
• Epoxy UL: 94V-0
V
(BR)DSS
R
DS(ON)MAX
I
D
60V
5Ω@10V
340mA
5.3Ω@4.5V
2N7002K
www.doeshare.net
Typical characteristics