062
US3AAF T
HRU US3MAF
D SMAF
18
V
OLTAGE RANG 50 to 1000 Volts
CURRENT 3.0 Ampere
1-2
www.asemi99.com
2018.11 Rev.3.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25 ambient temperature unless otherwise specified.
• Single phase, half wave, 60Hz, resistive or inductive load.
• For ca
p
acitive load derate current by 20%.
SYMBOLS
US3A US3B US3D US3G US3J US3K US3M UNIT
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Current
At T
L
=105 (NOTE 1)
I
(AV)
3.0 Amps
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
100 Amps
Maximum Instantaneous Forward Voltage at 3.0A
V
F
1.0 1.3 1.7 Volts
T
A
= 25
10
Maximum DC Reverse Current
at rated DC Blocking Voltage at
T
A
= 125
I
R
200
A
Maximum Reverse Recovery Time
Test conditions I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
t
rr
50 100 nS
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
C
J
80 50 pF
R
θJA
55
Typical Thermal Resistance (Note 1)
R
θJL
17
/W
Operating Junction Temperature
T
J
(-55 to +150)
Storage Temperature Range
T
STG
(-55 to +150)
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted o
n
P.C.B. with 0.3×0.3″(8.0 × 8.0mm) copper pad areas.
FEATURES
• Plastic package has underwrites laboratory flammability
Classification 94V
-0
• Glass passivated chip junction
• Built-in strain relief,
• Fast switching speed for high efficiency
• High temperature soldering guaranteed
:
250 /10 seconds
MECHANICAL DATA
Case: JEDE transfer molded plastic
• Terminals: Solder plated, solderable pe
r
MIL-STD-750, method 2026
• Polarity: Color band denotes cathode end
• Weight: 0.00 ounce, 0. gram
surface mount super-fast recovery diode
S M A F
0.65 0.67 0.63
1.40
1.42 1.38
1.00
1.03
0.097
2.60
2.63
2.57
3.70
3.72 3.68
4.75 4.85
4.80
A
E
L
B
C
E
H
D
0.15 0.17 0.13
E
D
A
Dim M
in Max Typ
B
C
H
L
A
ll Dimensions in mm
RATI
NG AND CHRACTERISTIC CURVES US3A Thru US3M
2-2
www.asemi99.com
2018.11 Rev.3.1
FIG.2-MAXIMUM NON-REPETITIVE PEAK
100
T
jmax
40
2010
CHARACTERISTICS
2
150
1
0
CURRENT, (A)
PEAK FORWARD SURGE
100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine-Wave
(JEDEC Method) T =
FORWARD SURGE CURRENT
FIG.4-TYPICAL REVERSE
DERATING CURVE
FIG.1-TYPICAL FORWARD CURRENT
150
175
125
75
100
2.0
50
0
0
Single Phase
Inductive Load
Half Wave 60Hz
Resistive or
25
AVERAGE FORWARD CURRENT,
(A)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AMBIENT TEMPERATURE, ( C)
JT =25
80
40
100
(μA)
1.2
JT =25 C
0.80.4
1% Duty Cycle
Pulse Width=300us
(A)(A)
1000
100
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
0.1
10
REVERSE VOLTAGE,(V)
Vsig=50mVp-p
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS REVERSE CURRENT,
1.6
0.375″(9.5mm) Lead Length
f=1MHz
T =25 C
468
1 Cycle
60
10
1.010100
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
J
10
1.0
1.0
0.1
0.01
1.0
3.0
100
0.61.01.41.8
60
200
120140
T =100 CJ
50/100ns/cm
SET TIME BASE FOR
0
-1.0A
-0.25A
+0.5A
(+)
(-)
(-)
(approx.)
(+)
25 Vdc
10Ω
NONINDUCTIVENONINDUCTIVE
50Ω
(NOTE 1)
OSCILLOSCOPE
(NOTE 2)
GENERATIOR
PULSE
D.U.T.
INDUCTIVE
NON
1Ω
2.Rise time=10ns max. Source Impedance=
50 ohms
1 megohm. 22pF
NOTES : 1.Rise Time=7ns max. Input Impedance=
REVERSE RECOVERY TIME CHARACTERISTIC
F1G.6-TEST CIRCUIT DIAGRAM AND
1cm
Trr
0.1
100
5
0
/
1
0
0
/
2
0
0
V
6
0
0
V
3
0
0
-
4
0
0
V
8
0
0
V
-
1
0
0
V
50
U
S
3
A
-
U
S
3
G
U
S
1
3
J
-
U
S
3
M
j
V
OLTAGE RANG 50 to 1000 Volts
CURRENT 3.0 Ampere
surface mount super-fast recovery diode
US3AAF T
HRU US3MAF