Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25 °C
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: S52B — S520B
Simplified outline SMBF and symbol
MECHANICAL DATA
pprox. Weight: 57
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A mg / 0.002oz
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20
40
V
14
28
V
V
5.0
-55 ~ +150
A
A
V
mA
pF
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF
T = 25°C
a
T =100°C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
800
-55 ~ +150
°C
120
120
150
105
150
200
140
200
1.0
50
500
45
Typical Thermal Resistance
R
θJA
°C/W
150
70 84
Page 1 of 3
2016.01
Jingdao Microelectronics
山 东 晶 导 微 电 子 有 限 公 司
SS52BF THRU SS520BF
SMBF-S-SS52BF~SS520BF-5A200V
1
2
（1）
（2）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
（1）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Fig.2 Typical Reverse Characteristics
Instaneous Current ( μA)Reverse
20
40 60 80
0
T =25
J
°C
T =100
J
°C
Percent of Rated Peak Reverse Voltage（%）
100
10
0
10
1
10
2
10
3
10
4
T =75
J
°C
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance（ /W）°C
t, Pulse Duration（sec）
0.1 1 10
0.1
0
0.5
1
10
1.0 1.5 2.0
20
SS52BF/SS54BF
SS56BF/SS58BF
SS510BF/SS520BF
10
0.1 10
100
500
20
1001
1000
T =25
J
°C
SS54F/SS520F
SS52BF/SS54BF
SS56BF-SS520BF
Page 2 of 3
www.sdjingdao.com
2016.01
Jingdao Microelectronics
山 东 晶 导 微 电 子 有 限 公 司
SS52BF THRU SS520BF
Fig.1 Forward Current Derating Curve
1.0
2.0
3.0
4.0
5.0
6.0
0.0
25 50
75
100 125
Average Forward Current (A)
Case Temperature (°C)
150
10 100
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles at 60Hz
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
50
00
125
175
25
75
150
100