Version:3
1/4
1
2
1
2
Cathode
Anode
Metal silicon junction, majority
carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current
capability
For use in low voltage, high
frequency inverters, free wheeling,
and polarity protection applications
Case: SMAF
Terminals: Solderable per MIL-STD-750,
Method 2026
Approx. Weight: 27mg / 0.00095oz
Type number Marking code
SS22F
SS24F
SS26F
SS22
SS28F
SS210F
SS212F
SS215F
SS220F
SS24
SS26
SS28
SS210
SS212
SS215
SS220
SS22F Series
Surface Mount Schottky
Barrier Rectifier
FEATURES
SMAF
MECHANICAL DATA
CIRCUIT DIAGRAM
MARKING
Version:3
2/4
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20
40
V
14
28
V
V
2.0
-55 ~ +125
A
A
V
mA
pF
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 2 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS
22F
SS
24F
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
160
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
80
50
70 84
0.5
5
T
a
= 25°C
T
a
=100°C
I
R
0.3
3
80
Typical Thermal Resistance
°C/W
R
θJA
1
2
Measured at 1 MHz and applied reverse voltage of 4 V D.C
2
1
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
SS22F Series
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase half-wave
60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
SS
26F
SS
28F
SS
210F
SS
212F
SS
215F
SS
220F