US2AB T
HRU US2MB
CURRENT 2.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
1-2
www.asemi99.com
2018.11 Rev.3.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25 ambient temperature unless otherwise specified.
• Single phase, half wave, 60Hz, resistive or inductive load.
• For capacitive load derate current by 20%.
MAXIMUM RATINGS & THERMAL CHARACTERISTICS
PARAMETELS
SYMBOLS
US2A US2B US2D US2G US2J US2K US2M UNIT
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Current
At T
L
=105 (NOTE 1)
I
(AV)
2.0 Amps
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
50 Amps
Maximum lnstantaneous Forward Voltage at 2.0A
V
F
1.0 1.3 1.7 Volts
T
A
=25
5.0
Maximum DC Reverse Current
At rated DC blocking voltage at
T
A
=125
I
R
100
A
Maximum Reverse Recovery Time
Test conditions I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
t
rr
50 100 nS
Typical Junstion Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
C
J
50 30 pF
R
θJA
75
Typical Thermal Resistance (NOTE 1)
R
θJL
17
/W
Operating Junction Temperature T
J
(-55 to +150)
Storage Tempetature Rang T
STG
(-55 to +150)
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B. with 0.3×0.3″(8.0 × 8.0mm) copper pad areas.
FEATURES
• Plastic package has UL flammability
Classification 94V
-0
• Glass Passivated chip junction
• Built in strain relief
• Fast switching speed for high efficiency
• High temperature soldering guaranteed:
250 /10 seconds
MECHANICAL DATA
• Case: JEDED DO-214AA transfer molded plastic
• Terminals: Solder plated, Solderable per
MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Weight: 0.003 ounce, 0.093 gram
surface mount super-fast recovery diode
AA DO-214 (SMB)
Dimensions in inches and (millimeters)
.030(0.76)
.060(1.52)
.096(2.44)
.084(2.13)
.200(5.08)
.220(5.59)
.008(.203)
.002(.051)
.006(.152)
.012(.305)
.160(4.06)
.185(4.70)
.130(3.30)
.155(3.94)
.083(2.11)
.075(1.91)
RATI
NG AND CHRACTERISTIC CURVES US2A Thru US2M
2-2
www.asemi99.com
2018.11 Rev.3.1
CURRENT 2.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
FIG.2-MAXIMUM NON-REPETITIVE PEAK
100
T
jmax
40
2010
CHARACTERISTICS
2
60
1
0
CURRENT, (A)
PEAK FORWARD SURGE
100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine-Wave
(JEDEC Method) T =
FORWARD SURGE CURRENT
FIG.4-TYPICAL REVERSE
DERATING CURVE
FIG.1-TYPICAL FORWARD CURRENT
150
175
125
75
100
2.0
50
0
0
Single Phase
Inductive Load
Half Wave60Hz
Resistive or
25
AVERAGE FORWARD CURRENT,
(A)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AMBIENT TEMPERATURE, ( C)
JT =25
80
40
100
(μA)
1.2
J
T =25 C
0.80.4
1% Duty Cycle
Pulse Width=300us
(A)(A)
100
10
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
0.1
1
REVERSE VOLTAGE,(V)
Vsig=50mVp-p
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS REVERSE CURRENT,
1.6
0.375″(9.5mm) Lead Length
f=1MHz
T =25 C
468
1 Cycle
60
1.0
1.010100
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
J
10
1.0
0.1
0.01
0.001
1.0
3.0
40
0.61.01.41.8
60
200
120140
T =100 CJ
50/100ns/cm
SET TIME BASE FOR
0
-1.0A
-0.25A
+0.5A
(+)
(-)
(-)
(approx.)
(+)
25 Vdc
10Ω
NONINDUCTIVENONINDUCTIVE
50Ω
(NOTE 1)
OSCILLOSCOPE
(NOTE 2)
GENERATIOR
PULSE
D.U.T.
INDUCTIVE
NON
1Ω
2.Rise time=10ns max. Source Impedance=
50 ohms
1 magohm. 22pF
NOTES : 1.Rise Time=7ns max. Input Impedance=
REVERSE RECOVERY TIME CHARACTERISTIC
F1G.6-TEST CIRCUIT DIAGRAM AND
1cm
Trr
0.1
10
5
0
/
1
0
0
/
2
0
0
V
6
0
0
V
3
0
0
/
4
0
0
V
8
0
0
V
-
1
0
0
0
V
20
U
S
2
A
-
U
S
2
G
U
S
2
J
-
U
S
2
M
J
surface mount super-fast recovery diode
US2AB T
HRU US2MB