W
eight: 0.003ounce, 0.090gram
Case: JEDED SMBF molded plastic over glass passivated chip
S2ABF T
HRU S2MBF
CURRENT 2.0 Am
pere
M
AXIMUM RATINGS & THERMAL CHARACTERISTICS
V
OLTAGE RANG 50 to 1000 Volts
1-2
www.asemi99.com
2018.11 Rev.3.1
R
atings at 25 ambient temperature unless otherwise specified
SY
MBOLS
S2
A S2B S2D S2G S2J S2K S2M UNIT
M
aximum Repetitive Peak Reverse Voltage
V
RRM
50
100 200 400 600 800 1000 Volts
M
aximum RMS Voltage
V
RMS
35
70 140 280 420 560 700 Volts
Ma
ximum DC Blocking Voltage
V
DC
50
100 200 400 600 800 1000 Volts
M
aximum Average Forward Rectified
Current at T
L
=100
I
F
(AV)
2.
0 Amps
Pe
ak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC method) T
L
=100
I
FSM
50
Amps
R
θJA
53
T
ypical Thermal Resistance (NOTE 1)
R
θJL
16
/W
O
perating and Storage Temperature Range
T
J
,T
ST
G
-55 t
o +150
ELECT
RICAL CHARACTERISTICS
SY
MBOLS
S2
A S2B S2D S2G S2J S2K S2M UNIT
Ma
ximum Instantaneous Forward Voltage at 1.5A
V
F
1.
15 Volts
T
A
=2
5
5.
0
M
aximum DC Reverse Current
at rated DC Blocking Voltage
T
A
=
125
I
R
125
µA
T
ypical Reverse Recovery Time at
I
F
=
0.5A, I
R
=
1.0A, I
RR
=0.
25A,
T
rr
2.
0 µs
T
ypical junction capacitance at 4.0V, 1MHz
C
J
30
pF
No
tes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B.with 0.3×0.3(8.0 × 8.0mm) copper pad areas.
FEA
TURES
P
lastic package has underwrites laboratory flammability
Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief, ideal for automated placement
Glass Passivated chip junction
High temperature soldering guaranteed
250/10 second at terminals
M
ECHANICAL DATA
P
olarity: Color band denotes cathode end
surface mount rectifier diode
S M B F
0.73 0.77 0.75
0.021 0.20
1.96 2.00 1.98
1.38 1.351.32
3.60 3.63 3.57
4.30 4.33 4.27
5.505.55 5.45
A
E
L
B
C
E
H
D
E
D
A
Dim M
in Max Typ
B
C
H
L
A
ll Dimensions in mm
0.019
Te
rminals: Solder plated, Solderable per MIL-STD-750, method
2026
2.0
RATI
NG AND CHRACTERISTIC CURVES S2A Thru S2M
2-2
www.asemi99.com
2018.11 Rev.3.1
CURRENT 2.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
CO
PPER PAD AREAS
0.27X0.27″ (7.0X7.0mm)
0
INDUCTIVE LOAD
50
LE
AD TEMPERATURE,( )
F1G.1-FORWARD CURRENT
DERATING CURVE
AVERAG
E FORWARD CURRENT
F
1G.5-TYPICAL JUNCTION CAPACITANCE
100101.
00.10.01
JU
NCTION CAPACITANCE,(pF)
RE
VRESE VOLTAGE,(V)
1
10
100
Vsi
g=50mVp-p
f=1MHz
T=25
J
F
ORWARD CHARACTERISTICS
F1G.3-TYPICAL INSTANTANEOUS
AM
PERES
INSTANTANEOUS FORWARD CURRENT,
F
1G.4-TYPICAL REVERSE
CHARACTERISTICS
REVERSE VOLTAGE,(%)
PERCENT OF RATED PEAK
I
NSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
J
T =
25
F
ORWARD SURGE CURRENT
F1G.2-MAXIMUM NON-REPETITIVE PEAK
AM
PERES
PEAK FORWARD SURGE CURRENT,
NUM
BER OF CYCLES AT 60 Hz
100101
L
T=
90
(
JEDEC Method)
8.3ms Single Half Sine-Wave
50
1.0
60 70 80 90 100 110 120 130 140 150
INDUCTIVE LOAD
60 Hz RESISTIVE OR
60Hz RESISTIVE OR
40
20
30
10
0
AM
PERES
1.
61.41.21.00.80.60.4
0.01
0.1
1.0
10
T=
25
P
ulse Width=300us
1
% Duty Cycle
INS
TANTANEOUS FORWARD VOLTAGE, VOLTS
10
1.
0
0.1
0.01
0 10080604020
T
=100
J
J
T
=125
J
surface mount rectifier diode
S2ABF T
HRU S2MBF