Non-reptitive Peak Forward
Surge Current
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Continuous Forward Current
V
RRM
V
RMS
I
F
I
FSM
P
tot
120 200 250 V
100 150 200
V
250
-55 ~ +150
A
mW
°C
Units
T
j
, T
stg
Symbols
mA
Repetitive Peak Forward Current
I
FRM
625
mA
at 1s
at 1ms
at 1 us
Total Power Dissipation
500
BAV19WS BAV20WS BAV21WS
Version：3
1／3
Type number Marking code
BAV19WS
BAV20WS
BAV21WS
A8
T2
T3
1
2
Cathode
Anode
1
2
BAV19WS Series
Switching Diode
CIRCUIT DIAGRAM
● For surface mounted applications
● Glass Passivated Chip Junction
● Fast reverse recovery time
● Ideal for automated placement
● Lead free in comply with EU RoHS
2011/65/EU directives
FEATURES
SOD-323
MECHANICAL DATA
● Case: SOD-323
● Terminals: Solderable per MIL-STD-750,
Method 2026
● Approx. Weight: 5.48mg / 0.00019oz
MARKING
MAXIMUM RATINGS (Ta=25
°C
unless otherwise noted)
1
3
9
100
200
300
400
500
600
0.0
25 50
75
100 125 150 175
Fig.1 Forward Current Derating Curve
Total Power Dissipation (mW)
Ambient Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
0.2 0.4 0.6 1.2 1.40.0
0.01
0.1
1.0
Instaneous Forward Voltage (V)
T =25
J
°C
Fig.2 Typical Reverse Characteristics
0.01
0.1
1
100
20 40 60 80 100 12000
percent of Rated Peak Voltage (%)Reverse
Instaneous Current（ A）Reverse μ
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
10
T =25
J
°C
T =150
J
°C
0.8 1.0 1.6
Version：3
2／3
Parameter
Reverse BreakdownVoltage at I
R
=100μA
V
(BR)R
120 200 250 V
Units
Symbols
BAV19WS BAV20WS BAV21WS
V
F
V
at Rated DC Blocking Voltage
I
R
μA
5
pF
C
j
Typical Junction Capacitance
at V
R
=4V, f=1MHz
Maximum Reverse Recovery Time
ns
t
rr
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )
Maximum Forward Voltage
Maximum DC Reverse Current at 100mA
at 200mA
Ta=25°C
Ta=150°C
1.00
1.25
0.1
100
BAV19WS Series
TYPICAL CHARACTERISTICS