1 2
1
2
Cathode
Anode
● Metal silicon junction, majority
carrier conduction
● For surface mounted applications
● Low power loss, high efficiency
● High forward surge current
capability
● For use in low voltage, high
frequency inverters, free wheeling,
and polarity protection applications
● Case: SMB
● Terminals: Solderable per MIL-STD-750,
Method 2026
● Approx. Weight: 95mg / 0.0034oz
Version：3
1／4
Type number Marking code
SS32B
SS34B
SS36B
SS38B
SS310B
SS312B
SS315B
SS320B
SS32
SS34
SS36
SS38
SS310
SS312
SS315
SS320
FEATURES
SMB
SS32B Series
Surface Mount Schottky
Barrier Rectifier
MECHANICAL DATA
CIRCUIT DIAGRAM
MARKING
Version：3
2／4
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward
Rectified Current
20
40
V
14
28
V
V
3.0
0.5
5
-55 ~ +150
A
A
V
mA
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
T
a
= 25°C
T
a
=100°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
0.3
3
80
70 84
60
Typical Thermal Resistance
°C/W
R
θJA
pF
C
j
450 400
Typical Junction Capacitance
（1）
（2）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
（1）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
SS32B Series
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-
wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
SS
32B
SS
34B
SS
36B
SS
38B
SS
310B
SS
312B
SS
315B
SS
320B