1
2
1
2
Cathode
Anode
● Metal silicon junction, majority carrier
conduction
● For surface mounted applications
● Low power loss, high efficiency
● High forward surge current capability
● For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications
● Case: SMB
● Terminals: Solderable per MIL-STD-750,
Method 2026
● Approx. Weight: 0.095g / 0.003oz
Type number Marking code
SS22B
SS24B
SS26B
SS22
SS28B
SS210B
SS212B
SS215B
SS220B
SS24
SS26
SS28
SS210
SS212
SS215
SS220
Version：3
1／4
FEATURES
SMB
MECHANICAL DATA
CIRCUIT DIAGRAM
MARKING
SS22B Series
Surface Mount Schottky
Barrier Rectifier
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak
Reverse Voltage
Maximum RMS voltage
Maximum Average Forward
Rectified Current
20
40
V
14
28
V
V
2.0
0.5
5
-55 ~ +125
A
A
V
mA
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 2 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
T
a
= 25°C
T
a
=100°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
0.3
3
4555
70 84
60
Typical Thermal Resistance
°C/W
R
θJA
pF
C
j
220 11
0
Typical Junction Capacitance
（1）
（2）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
（1）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Version：3
2／4
SS22B Series
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-
wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
SS
22B
SS
24B
SS
26B
SS
28B
SS
210B
SS
212B
SS
215B
SS
220B