VCBO
40 V
VCEO
20 V
VEBO
5 V
ICM
0.5 A
PD
0.625 W
TJ
150
℃
Tstg
-55~150
℃
MARKING : J3
Symbol UnitValue
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Power Dissipation
Version：8
1／3
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
SOT-23
● High Collector Current.
● Complementary to S9012.
● Excellent hFE Linearity.
CIRCUIT DIAGRAM
MAXIMUM RATINGS (Ta=25
°C
unless otherwise noted)
S9013
TRANSISTOR (NPN)
BV
EBO
I
E
=100uA，I
C
=0
5 V
BV
CBO
I
C
=100uA，I
E
=0
40 V
BV
CEO
I
C
=100uA，I
B
=0
20 V
I
EBO
V
EB
=5V，I
C
=0
0.1 uA
I
CBO
V
CB
=40V，I
E
=0
0.1 uA
I
CEO
V
CE
=20V，I
B
=0
0.1 uA
V
CESAT
I
C
=500mA，I
B
=50mA
0.6 V
V
BESAT
I
C
=500mA，I
B
=50mA
1.2 V
h
fe
V
CE
=1V，I
C
=50mA
200 350
f
T
V
CE
=6V，I
C
=20mA
F=30MHZ
150 MHZ
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown volt
age
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Version：8
2／3
S9013
TYPICAL CHARACTERISTICS