V
CBO
50
V
V
CEO
45
V
V
EBO
5
V
I
CM
0.1
A
P
D
0.45
W
T
J
150
℃
T
stg
-55~150
℃
S9014
FEATURES
z Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Power Dissipation
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
CIRCUIT DIAGRAM
Version：8
1／3
BV
EBO
I
E
=100uA，I
C
=0
5 V
BV
CBO
I
C
=100uA，I
E
=0
50 V
BV
CEO
I
C
=100uA，I
B
=0
45 V
I
EBO
V
EB
=5V，I
C
=0
0.1 uA
I
CBO
V
CB
=40V，I
E
=0
0.1 uA
I
CEO
V
CE
=40V，I
B
=0
0.1 uA
V
CESAT
I
C
=100mA，I
B
=5mA
0.3 V
V
BESAT
I
C
=100mA，I
B
=5mA
1 V
h
fe
V
CE
=5V，I
C
=1mA
300 400
f
T
V
CE
=5V，I
C
=10m A
F=30MHZ
150 MHZ
T
YPICAL CHARACTERISTICS
E
LECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Max
Unit
S9014
Version：8
2／3
-
-
-
-
-
-
-
-
-
-