V
CBO
-40 V
V
CEO
-20 V
V
EBO
-5 V
I
CM
0.5 A
P
D
0.625 W
T
J
150
℃
T
stg
-55~150
℃
Symbol UnitValue
Collector-Base V
oltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Power Dissipation
Version：8
1／3
CIRCUIT DIAGRAM
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
MARKING : 2T1
● High Collector Current
● Complementary To S9013
● Excellent hFE Linearity
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
S9012
TRANSISTOR (PNP)
BV
EBO
I
E
=-100uA，I
C
=0
-5 V
BV
CBO
I
C
=-100uA，I
E
=0
-40 V
BV
CEO
I
C
=-100uA，I
B
=0
-20 V
I
EBO
V
EB
=-5V，I
C
=0
-0.1 uA
I
CBO
V
CB
=-40V，I
E
=0
-0.1 uA
I
CEO
V
CE
=-20V，I
B
=0
-0.1 uA
V
CESAT
I
C
=-500mA，I
B
=-50mA
-0.6 V
V
BESAT
I
C
=-500mA，I
B
=-50mA
-1.2 V
h
fe
V
CE
=-1V，I
C
=-50mA
200 350
f
T
V
CE
=-6V，I
C
=-20mA
F=30MHZ
150 MHZ
P
arameter
Symbol Test conditions Min Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Version：8
2／3
S9012
ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified
TYPICAL CHARACTERISTICS